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5R199P-VB TO263 Product details
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Product Introduction
5R199P-VB is a single N-channel power MOSFET in TO263 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for electronic system designs that require efficient energy conversion and high power handling.
5R199P-VB is a single N-channel power MOSFET in TO263 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for electronic system designs that require efficient energy conversion and high power handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Multi-Epitaxial Transistor Technology)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (Multi-Epitaxial Transistor Technology)
Domain and module applications：
Applications and module examples
Applications
1. **Power conversion**
- 5R199P-VB is suitable for high-power switching power supplies (SMPS), inverters, and other power conversion applications that need to handle high currents and high voltages. Its low on-resistance and high current carrying capacity make it excel in these applications.
2. **Electric vehicle charging**
- In electric vehicle chargers, this MOSFET can be used in inverters and power management units to achieve high-efficiency power conversion and fast charging functions.
3. **Industrial automation**
- In industrial control and automation systems, 5R199P-VB can be used as a key component of motor drives, high-power switches, and other high-performance electronic devices to provide stable and reliable power control.
Module Examples
1. **Solar Inverter Module**
- In solar cell systems, this device is used as a key component of the inverter to convert DC power to AC power for use in the power grid. Its high current carrying capacity and low on-resistance ensure efficient operation of the system.
2. **Industrial Motor Drive Module**
- Among various industrial motor drive modules, 5R199P-VB can be used to control high-power motors such as three-phase asynchronous motors and stepper motors, ensuring efficient and precise operation and control.
3. **High-Performance Power Management Module**
- This type of MOSFET can be used in high-performance power management systems, such as server power supplies, communication base stations and other equipment that requires stable voltage and high-efficiency conversion.
In summary, the 5R199P-VB is a single N-channel power MOSFET suitable for high voltage and high current applications. It has excellent electrical characteristics and reliability and is suitable for the design and application of various high-performance electronic systems such as solar inverters, electric vehicle chargers, and industrial motor drives.
Applications
1. **Power conversion**
- 5R199P-VB is suitable for high-power switching power supplies (SMPS), inverters, and other power conversion applications that need to handle high currents and high voltages. Its low on-resistance and high current carrying capacity make it excel in these applications.
2. **Electric vehicle charging**
- In electric vehicle chargers, this MOSFET can be used in inverters and power management units to achieve high-efficiency power conversion and fast charging functions.
3. **Industrial automation**
- In industrial control and automation systems, 5R199P-VB can be used as a key component of motor drives, high-power switches, and other high-performance electronic devices to provide stable and reliable power control.
Module Examples
1. **Solar Inverter Module**
- In solar cell systems, this device is used as a key component of the inverter to convert DC power to AC power for use in the power grid. Its high current carrying capacity and low on-resistance ensure efficient operation of the system.
2. **Industrial Motor Drive Module**
- Among various industrial motor drive modules, 5R199P-VB can be used to control high-power motors such as three-phase asynchronous motors and stepper motors, ensuring efficient and precise operation and control.
3. **High-Performance Power Management Module**
- This type of MOSFET can be used in high-performance power management systems, such as server power supplies, communication base stations and other equipment that requires stable voltage and high-efficiency conversion.
In summary, the 5R199P-VB is a single N-channel power MOSFET suitable for high voltage and high current applications. It has excellent electrical characteristics and reliability and is suitable for the design and application of various high-performance electronic systems such as solar inverters, electric vehicle chargers, and industrial motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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