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5R140P-VB TO220F Product details
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Product Introduction
**Model:** 5R140P-VB TO220F
**Package:** TO220F
**Configuration:** Single N-channel
**VDS:** 650V
**VGS:** 30（±V）
**Vth:** 3.5V
**RDS(ON):** 160mΩ @ VGS=10V
**ID:** 20A
**Technology:** SJ_Multi-EPI
The 5R140P-VB TO220F is a high voltage single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and maximum continuous drain current (ID) is 20A. This MOSFET adopts SJ_Multi-EPI technology, which combines multiple epitaxial technologies and is suitable for high voltage, high current and low on-resistance requirements.
**Model:** 5R140P-VB TO220F
**Package:** TO220F
**Configuration:** Single N-channel
**VDS:** 650V
**VGS:** 30（±V）
**Vth:** 3.5V
**RDS(ON):** 160mΩ @ VGS=10V
**ID:** 20A
**Technology:** SJ_Multi-EPI
The 5R140P-VB TO220F is a high voltage single N-channel MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 160mΩ (at VGS=10V), and maximum continuous drain current (ID) is 20A. This MOSFET adopts SJ_Multi-EPI technology, which combines multiple epitaxial technologies and is suitable for high voltage, high current and low on-resistance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| Parameter| Value|
|-------------------|-----------|
| Model| 5R140P-VB TO220F |
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | 30 (±V) |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 160mΩ @ VGS=10V |
| Maximum continuous drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
| Parameter| Value|
|-------------------|-----------|
| Model| 5R140P-VB TO220F |
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | 30 (±V) |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 160mΩ @ VGS=10V |
| Maximum continuous drain current (ID) | 20A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
Application Fields and Module Examples
1. **EV Charging Stations:**
5R140P-VB TO220F MOSFET is suitable for DC charging modules of EV charging stations. Its high current and low on-resistance characteristics enable it to provide efficient power switch control, handle the high current requirements in charging stations, and ensure charging efficiency and speed.
2. **Industrial Power Modules:**
In industrial power modules, this MOSFET can be used as a switch tube to handle power control of factory equipment and machinery. Its high voltage capability and low on-resistance ensure efficient operation and reliability of industrial equipment.
3. **Power Inverters:**
In power inverters, 5R140P-VB TO220F MOSFET can help achieve efficient energy conversion from DC to AC. It can handle the high voltage and current requirements in the inverter, improving the conversion efficiency and stability of the inverter.
4. **Electric Vehicle Drive Systems: **
In the drive system of electric vehicles, this MOSFET can be used in motor control circuits to handle high voltage and high current requirements. It can provide reliable motor drive and efficiency, supporting the high performance and long endurance of electric vehicles.
Through the above examples, 5R140P-VB TO220F MOSFET demonstrates its superior performance in high voltage, high current and low on-resistance application scenarios, and is suitable for key circuit designs in multiple fields such as electric vehicle charging, industrial power supply and electric vehicle drive.
1. **EV Charging Stations:**
5R140P-VB TO220F MOSFET is suitable for DC charging modules of EV charging stations. Its high current and low on-resistance characteristics enable it to provide efficient power switch control, handle the high current requirements in charging stations, and ensure charging efficiency and speed.
2. **Industrial Power Modules:**
In industrial power modules, this MOSFET can be used as a switch tube to handle power control of factory equipment and machinery. Its high voltage capability and low on-resistance ensure efficient operation and reliability of industrial equipment.
3. **Power Inverters:**
In power inverters, 5R140P-VB TO220F MOSFET can help achieve efficient energy conversion from DC to AC. It can handle the high voltage and current requirements in the inverter, improving the conversion efficiency and stability of the inverter.
4. **Electric Vehicle Drive Systems: **
In the drive system of electric vehicles, this MOSFET can be used in motor control circuits to handle high voltage and high current requirements. It can provide reliable motor drive and efficiency, supporting the high performance and long endurance of electric vehicles.
Through the above examples, 5R140P-VB TO220F MOSFET demonstrates its superior performance in high voltage, high current and low on-resistance application scenarios, and is suitable for key circuit designs in multiple fields such as electric vehicle charging, industrial power supply and electric vehicle drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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