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5N95K3-VB TO251 Product details
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Product Introduction
**5N95K3-VB TO251** is a high performance single N-channel power MOSFET designed for power control and switching in high voltage applications. It adopts TO251 package and is suitable for electronic systems and equipment that require high voltage and stable performance.
**5N95K3-VB TO251** is a high performance single N-channel power MOSFET designed for power control and switching in high voltage applications. It adopts TO251 package and is suitable for electronic systems and equipment that require high voltage and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | 2700(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: 5N95K3-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: 5N95K3-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
**5N95K3-VB TO251** is suitable for the following fields and modules to provide stable and efficient power control:
1. **Industrial power supply**:
- In industrial equipment and power systems, MOSFETs that can withstand high voltage and high power are required to ensure the reliability and continuous operation of the equipment. 5N95K3-VB is an ideal choice in industrial power supply due to its high drain-source voltage of up to 900V and stable on-resistance.
2. **Electric vehicle charging pile**:
- Electric vehicle charging piles require high-efficiency and high-voltage power management systems to support various types and sizes of electric vehicle charging needs. This MOSFET is able to provide stable power switching and current control in electric vehicle charging piles.
3. **Solar inverter**:
- In solar power systems, inverters require high-voltage MOSFETs to convert DC power to AC power. The high voltage characteristics and SJ_Multi-EPI technology of 5N95K3-VB make it suitable for dealing with the high voltage requirements of solar inverters and providing stable energy conversion efficiency.
4. **Power Adapter**:
- Small electronic devices such as laptop power adapters require high efficiency and compact power management circuits. This MOSFET can be used in the power switching part of the power adapter to provide efficient power conversion and stable power output.
5. **UPS System**:
- Uninterruptible Power System (UPS) requires reliable power switching devices to ensure continuous power supply to critical equipment during grid failure. The high voltage and low on-resistance characteristics of 5N95K3-VB make it an important component in UPS systems.
From the above examples, we can see the applicability and advantages of 5N95K3-VB TO251 MOSFET in a variety of high voltage power applications, providing powerful solution options for electronic engineers and system designers.
**5N95K3-VB TO251** is suitable for the following fields and modules to provide stable and efficient power control:
1. **Industrial power supply**:
- In industrial equipment and power systems, MOSFETs that can withstand high voltage and high power are required to ensure the reliability and continuous operation of the equipment. 5N95K3-VB is an ideal choice in industrial power supply due to its high drain-source voltage of up to 900V and stable on-resistance.
2. **Electric vehicle charging pile**:
- Electric vehicle charging piles require high-efficiency and high-voltage power management systems to support various types and sizes of electric vehicle charging needs. This MOSFET is able to provide stable power switching and current control in electric vehicle charging piles.
3. **Solar inverter**:
- In solar power systems, inverters require high-voltage MOSFETs to convert DC power to AC power. The high voltage characteristics and SJ_Multi-EPI technology of 5N95K3-VB make it suitable for dealing with the high voltage requirements of solar inverters and providing stable energy conversion efficiency.
4. **Power Adapter**:
- Small electronic devices such as laptop power adapters require high efficiency and compact power management circuits. This MOSFET can be used in the power switching part of the power adapter to provide efficient power conversion and stable power output.
5. **UPS System**:
- Uninterruptible Power System (UPS) requires reliable power switching devices to ensure continuous power supply to critical equipment during grid failure. The high voltage and low on-resistance characteristics of 5N95K3-VB make it an important component in UPS systems.
From the above examples, we can see the applicability and advantages of 5N95K3-VB TO251 MOSFET in a variety of high voltage power applications, providing powerful solution options for electronic engineers and system designers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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