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5N65L-TN3-T-VB Product details
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Product Introduction
**5N65L-TN3-T-VB** is a high performance single N-channel power MOSFET designed to meet the application requirements of high voltage and high efficiency. It adopts TO252 package and is suitable for various power electronic systems and control applications.
**5N65L-TN3-T-VB** is a high performance single N-channel power MOSFET designed to meet the application requirements of high voltage and high efficiency. It adopts TO252 package and is suitable for various power electronic systems and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2750(mΩ) | 2200(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: 5N65L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
- **Model**: 5N65L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS = 4.5V
- 2200mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Planar technology
Domain and module applications：
Application Fields and Module Examples
**5N65L-TN3-T-VB** MOSFET is suitable for a variety of high voltage power applications, including but not limited to the following fields and modules:
1. **Power Converter**:
- In various power converters, MOSFET is used for power switching and current regulation. The high drain-source voltage and moderate on-resistance of 5N65L-TN3-T-VB make it particularly suitable for use in switch mode power converters (SMPS), such as desktop computer power supplies and server power supply units.
2. **Industrial Automation**:
- In industrial automation systems, high performance and reliable power MOSFETs are required to control various devices and machines. 5N65L-TN3-T-VB can operate stably under high voltage and high temperature environments, and is suitable for power control and switching of various automation equipment.
3. **Power Tools**:
- Power tools, such as electric drills, electric saws, etc., require a high performance power management system to ensure continuous and efficient operation. The high current carrying capability and low on-resistance of this MOSFET make it an ideal choice for use in power tool control circuits.
4. **Solar Inverter**:
- In solar power generation systems, the inverter requires a high-efficiency MOSFET to convert DC to AC. The 5N65L-TN3-T-VB can be used to improve the energy efficiency and reliability of solar inverters through its high voltage characteristics and low on-resistance.
5. **Electric Vehicle Charger**:
- In electric vehicle chargers, high-efficiency and high-stability power management are required. This MOSFET can be used in the power switch portion of electric vehicle chargers to ensure efficient energy conversion and a stable charging process.
The above examples demonstrate the wide applicability and high-performance characteristics of the 5N65L-TN3-T-VB MOSFET, which is suitable for a variety of electronic devices and power control systems.
**5N65L-TN3-T-VB** MOSFET is suitable for a variety of high voltage power applications, including but not limited to the following fields and modules:
1. **Power Converter**:
- In various power converters, MOSFET is used for power switching and current regulation. The high drain-source voltage and moderate on-resistance of 5N65L-TN3-T-VB make it particularly suitable for use in switch mode power converters (SMPS), such as desktop computer power supplies and server power supply units.
2. **Industrial Automation**:
- In industrial automation systems, high performance and reliable power MOSFETs are required to control various devices and machines. 5N65L-TN3-T-VB can operate stably under high voltage and high temperature environments, and is suitable for power control and switching of various automation equipment.
3. **Power Tools**:
- Power tools, such as electric drills, electric saws, etc., require a high performance power management system to ensure continuous and efficient operation. The high current carrying capability and low on-resistance of this MOSFET make it an ideal choice for use in power tool control circuits.
4. **Solar Inverter**:
- In solar power generation systems, the inverter requires a high-efficiency MOSFET to convert DC to AC. The 5N65L-TN3-T-VB can be used to improve the energy efficiency and reliability of solar inverters through its high voltage characteristics and low on-resistance.
5. **Electric Vehicle Charger**:
- In electric vehicle chargers, high-efficiency and high-stability power management are required. This MOSFET can be used in the power switch portion of electric vehicle chargers to ensure efficient energy conversion and a stable charging process.
The above examples demonstrate the wide applicability and high-performance characteristics of the 5N65L-TN3-T-VB MOSFET, which is suitable for a variety of electronic devices and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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