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5N30V-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**5N30V-VB**
5N30V-VB is a dual N+N channel MOSFET with common source, in TSSOP8 package. It is suitable for medium and low voltage applications, with good conduction characteristics and current carrying capacity.
**5N30V-VB**
5N30V-VB is a dual N+N channel MOSFET with common source, in TSSOP8 package. It is suitable for medium and low voltage applications, with good conduction characteristics and current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 19(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Common source dual N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 19mΩ @ VGS = 4.5V, 12mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 8.6A
- **Technology**: Trench
- **Package type**: TSSOP8
- **Configuration**: Common source dual N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 19mΩ @ VGS = 4.5V, 12mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 8.6A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
5N30V-VB TSSOP8 MOSFET is suitable for the following fields and modules:
1. **Power management**: It can be used in low-voltage DC-DC converters and regulators, such as power management circuits in portable devices, digital products and industrial control systems.
2. **Power tools**: In power tools and household appliances, it is a key component of motor controllers, providing efficient power switching and current control.
3. **LED driver**: It is used for current regulation and power control in LED lighting systems to ensure stable brightness and long life of LED lamps.
4. **Automotive electronics**: It is used in circuits such as power window control, battery management, and lamp control in vehicle electronic systems, as well as power management and power control in electric vehicles.
The characteristics of 5N30V-VB make it an ideal choice for a variety of power management and power control applications. Its low on-resistance and high current carrying capacity ensure stability and performance in environments with high efficiency and high reliability requirements.
5N30V-VB TSSOP8 MOSFET is suitable for the following fields and modules:
1. **Power management**: It can be used in low-voltage DC-DC converters and regulators, such as power management circuits in portable devices, digital products and industrial control systems.
2. **Power tools**: In power tools and household appliances, it is a key component of motor controllers, providing efficient power switching and current control.
3. **LED driver**: It is used for current regulation and power control in LED lighting systems to ensure stable brightness and long life of LED lamps.
4. **Automotive electronics**: It is used in circuits such as power window control, battery management, and lamp control in vehicle electronic systems, as well as power management and power control in electric vehicles.
The characteristics of 5N30V-VB make it an ideal choice for a variety of power management and power control applications. Its low on-resistance and high current carrying capacity ensure stability and performance in environments with high efficiency and high reliability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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