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5LN01C-TB-E-VB Product details
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5LN01C-TB-E-VB SOT23-3 MOSFET Product Introduction
The 5LN01C-TB-E-VB is a single N-channel MOSFET in a SOT23-3 package. The device is suitable for low-power applications, with a drain-source voltage (VDS) of 60V, a gate voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Using Trench technology, although the on-resistance (RDS(ON)) is high, 3100mΩ @ VGS=4.5V and 2800mΩ @ VGS=10V, it can provide a maximum drain current (ID) of 0.3A, which is suitable for occasions requiring low power consumption and low current drive.
The 5LN01C-TB-E-VB is a single N-channel MOSFET in a SOT23-3 package. The device is suitable for low-power applications, with a drain-source voltage (VDS) of 60V, a gate voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Using Trench technology, although the on-resistance (RDS(ON)) is high, 3100mΩ @ VGS=4.5V and 2800mΩ @ VGS=10V, it can provide a maximum drain current (ID) of 0.3A, which is suitable for occasions requiring low power consumption and low current drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
5LN01C-TB-E-VB SOT23-3 MOSFET Detailed Parameter Description
| Parameter| Value|
|-----------|--------------------------------|
| Package| SOT23-3 |
| Configuration| Single N-channel|
| Drain-Source Voltage (VDS) | 60V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.7V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 3100mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 2800mΩ |
| Drain Current (ID) | 0.3A |
| Technology| Trench |
| Parameter| Value|
|-----------|--------------------------------|
| Package| SOT23-3 |
| Configuration| Single N-channel|
| Drain-Source Voltage (VDS) | 60V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.7V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 3100mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 2800mΩ |
| Drain Current (ID) | 0.3A |
| Technology| Trench |
Domain and module applications：
5LN01C-TB-E-VB SOT23-3 MOSFET Applications and Module Examples
Applications
1. **Low-power electronic devices**: such as power management and battery protection in portable consumer electronics, such as smartphones and tablets.
2. **Sensor interface**: used for sensor signal amplification and interface circuits to ensure low noise and stable sensor operation.
3. **Power switch**: in low current loads and small power switching circuits, it provides basic switching functions and current control.
Module Examples
1. **Portable electronic module**: suitable for low-power switching circuits in various portable electronic products, such as battery management and charge and discharge control of handheld devices.
2. **Sensor interface module**: interface circuits used to connect and drive various sensors, ensuring stable sensor operation and minimizing power consumption.
5LN01C-TB-E-VB SOT23-3 MOSFET is an ideal choice for many electronic devices and modules that require miniaturization and low power design due to its small size, low power consumption and moderate current capability.
Applications
1. **Low-power electronic devices**: such as power management and battery protection in portable consumer electronics, such as smartphones and tablets.
2. **Sensor interface**: used for sensor signal amplification and interface circuits to ensure low noise and stable sensor operation.
3. **Power switch**: in low current loads and small power switching circuits, it provides basic switching functions and current control.
Module Examples
1. **Portable electronic module**: suitable for low-power switching circuits in various portable electronic products, such as battery management and charge and discharge control of handheld devices.
2. **Sensor interface module**: interface circuits used to connect and drive various sensors, ensuring stable sensor operation and minimizing power consumption.
5LN01C-TB-E-VB SOT23-3 MOSFET is an ideal choice for many electronic devices and modules that require miniaturization and low power design due to its small size, low power consumption and moderate current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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