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5806NG-VB TO251 Product details
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1. Product Introduction
**5806NG-VB TO251**
5806NG-VB is a single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 40V and is suitable for medium and low voltage circuit design. It is manufactured using Trench technology and has low on-resistance and moderate current carrying capacity.
**5806NG-VB TO251**
5806NG-VB is a single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 40V and is suitable for medium and low voltage circuit design. It is manufactured using Trench technology and has low on-resistance and moderate current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | 14(mΩ) | 13(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 40V | 1.8V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 14mΩ @ VGS = 4.5V, 13mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 55A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 14mΩ @ VGS = 4.5V, 13mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
3. Application fields and module examples
**5806NG-VB TO251** MOSFET is suitable for a variety of fields and modules. Here are a few specific examples:
1. **Power management**: In low-voltage DC-DC converters, it is used for power management of laptops, tablets and other portable devices to ensure high efficiency and long battery life.
2. **Power tools**: As a power switch in power tools (such as electric drills, electric hammers, etc.), it ensures high power output and work efficiency.
3. **Consumer electronics**: As a power switch in home electronic devices (such as game consoles, audio systems), it provides stable power supply and efficient energy conversion.
4. **Automotive electronics**: Used in power control applications such as 12V battery management, car chargers and car lighting in automotive electronic systems.
In summary, **5806NG-VB TO251** MOSFET is suitable for the design and implementation of various power management and power control applications due to its low voltage capability, low on-resistance and high current carrying capability.
**5806NG-VB TO251** MOSFET is suitable for a variety of fields and modules. Here are a few specific examples:
1. **Power management**: In low-voltage DC-DC converters, it is used for power management of laptops, tablets and other portable devices to ensure high efficiency and long battery life.
2. **Power tools**: As a power switch in power tools (such as electric drills, electric hammers, etc.), it ensures high power output and work efficiency.
3. **Consumer electronics**: As a power switch in home electronic devices (such as game consoles, audio systems), it provides stable power supply and efficient energy conversion.
4. **Automotive electronics**: Used in power control applications such as 12V battery management, car chargers and car lighting in automotive electronic systems.
In summary, **5806NG-VB TO251** MOSFET is suitable for the design and implementation of various power management and power control applications due to its low voltage capability, low on-resistance and high current carrying capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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