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56STS8205-VB Product details
Back to previous pageProduct introduction：
1. 56STS8205-VB Product Introduction
56STS8205-VB is a dual N+N channel MOSFET in SOT23-6 package. It has the characteristics of low leakage current and high efficiency, suitable for electronic circuit design that needs to control and regulate current. It is manufactured using Trench technology to provide excellent conduction characteristics and reliability.
56STS8205-VB is a dual N+N channel MOSFET in SOT23-6 package. It has the characteristics of low leakage current and high efficiency, suitable for electronic circuit design that needs to control and regulate current. It is manufactured using Trench technology to provide excellent conduction characteristics and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. 56STS8205-VB Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
56STS8205-VB MOSFET can be widely used in the following fields and modules:
1. **Power management and voltage regulation**:
- Due to its low on-resistance and high current carrying capacity, 56STS8205-VB can be used in various power management and voltage regulation circuits, such as DC-DC converters and battery management systems.
2. **Mobile devices and consumer electronics**:
- In mobile phones, tablets and portable electronic devices, 56STS8205-VB can be used as a key component for battery management and charging control, supporting high efficiency and long-term use of the device.
3. **Power tools and automotive electronics**:
- In power tools, electric vehicles and other in-vehicle electronic systems, 56STS8205-VB can be used as a power switch in the drive circuit to provide reliable power management and drive control.
4. **Industrial Automation**:
- In motor control, sensor signal processing and data acquisition of industrial automation equipment, 56STS8205-VB can ensure stable operation and high performance of the equipment.
5. **Communication Equipment**:
- In network equipment, communication base stations and other high-frequency transmission equipment, 56STS8205-VB can support high-frequency switching operations and signal processing to ensure the stability and reliability of the equipment.
The above examples show the versatile application capabilities of 56STS8205-VB MOSFET, which is suitable for a variety of electronic devices and systems that require high performance and complex circuit control.
56STS8205-VB MOSFET can be widely used in the following fields and modules:
1. **Power management and voltage regulation**:
- Due to its low on-resistance and high current carrying capacity, 56STS8205-VB can be used in various power management and voltage regulation circuits, such as DC-DC converters and battery management systems.
2. **Mobile devices and consumer electronics**:
- In mobile phones, tablets and portable electronic devices, 56STS8205-VB can be used as a key component for battery management and charging control, supporting high efficiency and long-term use of the device.
3. **Power tools and automotive electronics**:
- In power tools, electric vehicles and other in-vehicle electronic systems, 56STS8205-VB can be used as a power switch in the drive circuit to provide reliable power management and drive control.
4. **Industrial Automation**:
- In motor control, sensor signal processing and data acquisition of industrial automation equipment, 56STS8205-VB can ensure stable operation and high performance of the equipment.
5. **Communication Equipment**:
- In network equipment, communication base stations and other high-frequency transmission equipment, 56STS8205-VB can support high-frequency switching operations and signal processing to ensure the stability and reliability of the equipment.
The above examples show the versatile application capabilities of 56STS8205-VB MOSFET, which is suitable for a variety of electronic devices and systems that require high performance and complex circuit control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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