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54NM65ND-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**54NM65ND-VB TO247**
54NM65ND-VB is a single N-channel MOSFET in TO247 package. It has a drain-source voltage (VDS) of 650V and is suitable for medium and high voltage circuit design. It is manufactured using SJ_Multi-EPI technology and has low on-resistance and good current carrying capacity.
**54NM65ND-VB TO247**
54NM65ND-VB is a single N-channel MOSFET in TO247 package. It has a drain-source voltage (VDS) of 650V and is suitable for medium and high voltage circuit design. It is manufactured using SJ_Multi-EPI technology and has low on-resistance and good current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples
**54NM65ND-VB TO247** MOSFET is suitable for a variety of fields and modules. Here are a few specific examples:
1. **Power conversion**: In high-efficiency power converters such as electric vehicle chargers, industrial power supplies and grid applications, it is used for current control and power management.
2. **Industrial electrical**: As a switching device in industrial drives and controllers, such as motor drives, inverters and industrial automation systems.
3. **Electric vehicle charging**: Used for power switching and current control in electric vehicle charging piles and electric vehicle battery management systems.
4. **Solar inverter**: In the inverter of a solar power generation system, it is responsible for converting DC power into AC power and providing it to the grid or for home and commercial use.
In summary, the **54NM65ND-VB TO247** MOSFET is suitable for the design and implementation of various medium and high voltage circuits and power control applications due to its high voltage capability, low on-resistance and reliable performance.
**54NM65ND-VB TO247** MOSFET is suitable for a variety of fields and modules. Here are a few specific examples:
1. **Power conversion**: In high-efficiency power converters such as electric vehicle chargers, industrial power supplies and grid applications, it is used for current control and power management.
2. **Industrial electrical**: As a switching device in industrial drives and controllers, such as motor drives, inverters and industrial automation systems.
3. **Electric vehicle charging**: Used for power switching and current control in electric vehicle charging piles and electric vehicle battery management systems.
4. **Solar inverter**: In the inverter of a solar power generation system, it is responsible for converting DC power into AC power and providing it to the grid or for home and commercial use.
In summary, the **54NM65ND-VB TO247** MOSFET is suitable for the design and implementation of various medium and high voltage circuits and power control applications due to its high voltage capability, low on-resistance and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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