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4STS8816-VB Product details
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4STS8816-VB Product Introduction
4STS8816-VB is a dual N+N-channel metal oxide semiconductor field effect transistor (MOSFET) in SOT23-6 package. It has low drain-source voltage (20V) and medium current handling capability, suitable for low power applications.
4STS8816-VB is a dual N+N-channel metal oxide semiconductor field effect transistor (MOSFET) in SOT23-6 package. It has low drain-source voltage (20V) and medium current handling capability, suitable for low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
4STS8816-VB Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Dual N+N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 2.5V
- 24mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
Power Management and Conversion
Due to its low drain-source voltage and medium current handling capability, the 4STS8816-VB can be used in low-power power management and conversion circuits, such as power management for mobile devices, DC-DC converters, and switch control in charging circuits.
Battery Protection and Charge and Discharge Management
In circuits that need to protect and manage batteries, the 4STS8816-VB can be used as a charge and discharge switch element. It can effectively control the battery charge and discharge process and protect the battery from damage due to overcurrent and overvoltage.
Small Electronic Devices and Sensor Control
In small electronic devices and sensor control circuits, efficient circuit switching and control elements are required. The small package and moderate performance characteristics of the 4STS8816-VB make it an ideal choice for these applications, such as portable devices, sensor interface circuits, etc.
Analog signal switching and regulation
In applications that require analog signal switching and regulation, such as audio signal processing, analog sensor signal processing, etc., 4STS8816-VB can provide stable switching characteristics and low voltage drop to ensure signal clarity and accuracy.
From the above examples, it can be seen that 4STS8816-VB is a MOSFET suitable for low-power electronic devices and control circuits, especially for various power management, battery protection and small control applications that require low voltage and medium current handling capabilities.
Power Management and Conversion
Due to its low drain-source voltage and medium current handling capability, the 4STS8816-VB can be used in low-power power management and conversion circuits, such as power management for mobile devices, DC-DC converters, and switch control in charging circuits.
Battery Protection and Charge and Discharge Management
In circuits that need to protect and manage batteries, the 4STS8816-VB can be used as a charge and discharge switch element. It can effectively control the battery charge and discharge process and protect the battery from damage due to overcurrent and overvoltage.
Small Electronic Devices and Sensor Control
In small electronic devices and sensor control circuits, efficient circuit switching and control elements are required. The small package and moderate performance characteristics of the 4STS8816-VB make it an ideal choice for these applications, such as portable devices, sensor interface circuits, etc.
Analog signal switching and regulation
In applications that require analog signal switching and regulation, such as audio signal processing, analog sensor signal processing, etc., 4STS8816-VB can provide stable switching characteristics and low voltage drop to ensure signal clarity and accuracy.
From the above examples, it can be seen that 4STS8816-VB is a MOSFET suitable for low-power electronic devices and control circuits, especially for various power management, battery protection and small control applications that require low voltage and medium current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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