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4P04L08-VB TO252 Product details
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4P04L08-VB TO252 MOSFET Product Introduction
The 4P04L08-VB is a single P-channel MOSFET in a TO252 package. The device has a drain voltage (VDS) rating of -40V and a gate voltage (VGS) rating of ±20V, and a threshold voltage (Vth) of -2V. Using Trench technology, it has a low on-resistance (RDS(ON)) of 13 milliohms at a VGS of 4.5V and 6.8 milliohms at a VGS of 10V, and can provide a maximum drain current (ID) of -90A. It is suitable for high-power load switching and current control applications, with excellent conduction characteristics and thermal stability.
The 4P04L08-VB is a single P-channel MOSFET in a TO252 package. The device has a drain voltage (VDS) rating of -40V and a gate voltage (VGS) rating of ±20V, and a threshold voltage (Vth) of -2V. Using Trench technology, it has a low on-resistance (RDS(ON)) of 13 milliohms at a VGS of 4.5V and 6.8 milliohms at a VGS of 10V, and can provide a maximum drain current (ID) of -90A. It is suitable for high-power load switching and current control applications, with excellent conduction characteristics and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 13(mΩ) | 6.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
4P04L08-VB TO252 MOSFET Detailed Parameters
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO252 |
| Configuration | Single P-Channel |
| Drain Voltage (VDS) | -40V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | -2V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 13mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 6.8mΩ |
| Drain Current (ID) | -90A |
| Technology | Trench |
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO252 |
| Configuration | Single P-Channel |
| Drain Voltage (VDS) | -40V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | -2V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 13mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 6.8mΩ |
| Drain Current (ID) | -90A |
| Technology | Trench |
Domain and module applications：
4P04L08-VB TO252 MOSFET application areas and module examples
Application areas
1. **Power management**: Used in various types of power management systems, including battery management and power switching in laptops, tablets and consumer electronics.
2. **Automotive electronics**: In automotive electronic control units (ECUs), used in battery management systems and motor control units for electric vehicles, ensuring efficient energy conversion and battery protection.
3. **Industrial control**: Power switch modules in industrial automation equipment, such as PLC control units and motor drivers, provide stable power management and efficient current control.
4. **Communication equipment**: Power management units in communication base stations and data center equipment, ensuring stable operation of equipment and power conversion efficiency.
Module examples
1. **Laptop power management**: 4P04L08-VB can be used in power management modules in laptops and tablets, providing efficient battery management and power switching functions.
2. **Industrial Automation Equipment**: Power switch modules in industrial control systems for motor drive and equipment control to ensure stable power output and efficient current management.
3. **Electric Vehicle Drive System**: Battery management and motor control units for electric vehicles to achieve efficient energy conversion and battery protection.
Due to its negative drain voltage rating and high current handling capability, the 4P04L08-VB TO252 MOSFET is suitable for a variety of high-power load switching and current control applications, providing reliable power management and efficient energy conversion.
Application areas
1. **Power management**: Used in various types of power management systems, including battery management and power switching in laptops, tablets and consumer electronics.
2. **Automotive electronics**: In automotive electronic control units (ECUs), used in battery management systems and motor control units for electric vehicles, ensuring efficient energy conversion and battery protection.
3. **Industrial control**: Power switch modules in industrial automation equipment, such as PLC control units and motor drivers, provide stable power management and efficient current control.
4. **Communication equipment**: Power management units in communication base stations and data center equipment, ensuring stable operation of equipment and power conversion efficiency.
Module examples
1. **Laptop power management**: 4P04L08-VB can be used in power management modules in laptops and tablets, providing efficient battery management and power switching functions.
2. **Industrial Automation Equipment**: Power switch modules in industrial control systems for motor drive and equipment control to ensure stable power output and efficient current management.
3. **Electric Vehicle Drive System**: Battery management and motor control units for electric vehicles to achieve efficient energy conversion and battery protection.
Due to its negative drain voltage rating and high current handling capability, the 4P04L08-VB TO252 MOSFET is suitable for a variety of high-power load switching and current control applications, providing reliable power management and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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