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4P0409-VB TO263 Product details
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4P0409-VB TO263 MOSFET Product Introduction
The 4P0409-VB is a single P-channel MOSFET in a TO263 package. The device has a drain voltage (VDS) of -40V and a gate voltage (VGS) rating of ±20V, and a threshold voltage (Vth) of -2.5V. Using Trench technology, it has a low on-resistance (RDS(ON)) of 8.28 milliohms at a VGS of 4.5V and 4.1 milliohms at a VGS of 10V, and can provide a maximum drain current (ID) of -110A. It is suitable for high-power load switching and current control applications, with excellent conduction characteristics and thermal stability.
The 4P0409-VB is a single P-channel MOSFET in a TO263 package. The device has a drain voltage (VDS) of -40V and a gate voltage (VGS) rating of ±20V, and a threshold voltage (Vth) of -2.5V. Using Trench technology, it has a low on-resistance (RDS(ON)) of 8.28 milliohms at a VGS of 4.5V and 4.1 milliohms at a VGS of 10V, and can provide a maximum drain current (ID) of -110A. It is suitable for high-power load switching and current control applications, with excellent conduction characteristics and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 8.28(mΩ) | 4.1(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
4P0409-VB TO263 MOSFET Detailed Parameters
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO263 |
| Configuration | Single P-Channel |
| Drain Voltage (VDS) | -40V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | -2.5V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 8.28mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 4.1mΩ |
| Drain Current (ID) | -110A |
| Technology | Trench |
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO263 |
| Configuration | Single P-Channel |
| Drain Voltage (VDS) | -40V |
| Gate Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | -2.5V |
| On-Resistance (RDS(ON)) @ VGS=4.5V | 8.28mΩ |
| On-Resistance (RDS(ON)) @ VGS=10V | 4.1mΩ |
| Drain Current (ID) | -110A |
| Technology | Trench |
Domain and module applications：
Application fields and module examples of 4P0409-VB TO263 MOSFET
Application fields
1. **Electric vehicles**: Power switches in battery management systems and motor control units of electric vehicles to ensure efficient energy conversion and battery protection.
2. **Industrial electronics**: Power management and current control modules in industrial control equipment, such as PLC control units and motor drivers.
3. **Power converter**: High-power switch modules in DC-DC converters and power inverters to provide stable power output and efficient energy conversion.
4. **Communication equipment**: Power distribution units in communication base stations and data center equipment to ensure stable operation of equipment and power conversion efficiency.
Module examples
1. **Electric vehicle drive system**: 4P0409-VB can be used in battery management systems and motor control units of electric vehicles to achieve efficient battery charge and discharge control and energy management.
2. **Industrial Automation Equipment**: Power switch modules in industrial automation control systems provide reliable power management and efficient current control.
3. **Power Distribution Unit**: Power management modules used in equipment such as data centers and communication base stations to ensure long-term stable operation and energy saving of equipment.
Due to its negative voltage drain voltage rating and high current handling capability, the 4P0409-VB TO263 MOSFET is an ideal choice for a variety of high-power load switching and current control applications, providing stable power management and efficient energy conversion.
Application fields
1. **Electric vehicles**: Power switches in battery management systems and motor control units of electric vehicles to ensure efficient energy conversion and battery protection.
2. **Industrial electronics**: Power management and current control modules in industrial control equipment, such as PLC control units and motor drivers.
3. **Power converter**: High-power switch modules in DC-DC converters and power inverters to provide stable power output and efficient energy conversion.
4. **Communication equipment**: Power distribution units in communication base stations and data center equipment to ensure stable operation of equipment and power conversion efficiency.
Module examples
1. **Electric vehicle drive system**: 4P0409-VB can be used in battery management systems and motor control units of electric vehicles to achieve efficient battery charge and discharge control and energy management.
2. **Industrial Automation Equipment**: Power switch modules in industrial automation control systems provide reliable power management and efficient current control.
3. **Power Distribution Unit**: Power management modules used in equipment such as data centers and communication base stations to ensure long-term stable operation and energy saving of equipment.
Due to its negative voltage drain voltage rating and high current handling capability, the 4P0409-VB TO263 MOSFET is an ideal choice for a variety of high-power load switching and current control applications, providing stable power management and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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