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4P0407-VB TO263 Product details
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Product Introduction
**Model: 4P0407-VB TO263**
4P0407-VB is a single P-channel power MOSFET in TO263 package. It is suitable for medium and high power applications, with negative drain-source voltage and low on-resistance characteristics. The device adopts Trench technology, combined with optimized design, to provide efficient electrical performance and reliability.
**Model: 4P0407-VB TO263**
4P0407-VB is a single P-channel power MOSFET in TO263 package. It is suitable for medium and high power applications, with negative drain-source voltage and low on-resistance characteristics. The device adopts Trench technology, combined with optimized design, to provide efficient electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 8.28(mΩ) | 4.1(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS=4.5V
- 4.1mΩ @ VGS=10V
- **Drain current (ID)**: -110A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS=4.5V
- 4.1mΩ @ VGS=10V
- **Drain current (ID)**: -110A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
4P0407-VB power MOSFET is suitable for medium and high power applications, including but not limited to the following fields and modules:
1. **Power Management**:
- **Power Switching**: Used for negative voltage power switches, such as negative voltage switches and circuit protection in power inverters.
2. **Electric Vehicle Battery Management**:
- In the battery management system of electric vehicles, it is used for battery charge and discharge control and protection to ensure the safe and efficient operation of the battery system.
3. **Industrial Automation**:
- In industrial control systems, it is used for motor control and power transmission management, such as drive circuits and motor controllers for factory equipment.
4. **Power Inverters**:
- In power inverters that require negative voltage operation, such as solar inverters and wind power inverters, for power conversion and circuit protection.
5. **Medical Devices**:
- In medical devices with high-efficiency and low-voltage power management, ensuring device stability and power efficiency, such as medical imaging equipment and laser surgery equipment.
From the above examples, it can be seen that the 4P0407-VB power MOSFET has a wide range of applications in negative voltage and high power applications. Its unique negative drain-source voltage and low on-resistance characteristics make it an ideal choice for a variety of electronic devices.
4P0407-VB power MOSFET is suitable for medium and high power applications, including but not limited to the following fields and modules:
1. **Power Management**:
- **Power Switching**: Used for negative voltage power switches, such as negative voltage switches and circuit protection in power inverters.
2. **Electric Vehicle Battery Management**:
- In the battery management system of electric vehicles, it is used for battery charge and discharge control and protection to ensure the safe and efficient operation of the battery system.
3. **Industrial Automation**:
- In industrial control systems, it is used for motor control and power transmission management, such as drive circuits and motor controllers for factory equipment.
4. **Power Inverters**:
- In power inverters that require negative voltage operation, such as solar inverters and wind power inverters, for power conversion and circuit protection.
5. **Medical Devices**:
- In medical devices with high-efficiency and low-voltage power management, ensuring device stability and power efficiency, such as medical imaging equipment and laser surgery equipment.
From the above examples, it can be seen that the 4P0407-VB power MOSFET has a wide range of applications in negative voltage and high power applications. Its unique negative drain-source voltage and low on-resistance characteristics make it an ideal choice for a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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