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4N80L-TN3-R-VB Product details
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Product Introduction
4N80L-TN3-R-VB is a single N-channel MOSFET in TO252 package with high voltage withstand capability and stable performance characteristics, suitable for applications requiring high voltage and low power consumption.
4N80L-TN3-R-VB is a single N-channel MOSFET in TO252 package with high voltage withstand capability and stable performance characteristics, suitable for applications requiring high voltage and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: 4N80L-TN3-R-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Model**: 4N80L-TN3-R-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power Inverters**:
4N80L-TN3-R-VB can be used in power inverters, especially where medium power and high voltage need to be handled. It is suitable for solar inverters, electric vehicle charging stations and UPS (uninterruptible power supply systems), providing stable power conversion and efficient energy management.
2. **Industrial Control Systems**:
In industrial control systems, especially where power and signal processing of high-voltage equipment needs to be controlled and managed, this MOSFET can provide reliable switching functions. It is suitable for factory automation, robotics and power electronic converters to support complex power management and control requirements.
3. **Electric Vehicles**:
In the electric power steering system and battery management system of electric vehicles, 4N80L-TN3-R-VB can be used as a key power switch. Its high voltage withstand capability and low on-resistance ensure high efficiency and long-term reliability of the system, meeting the power density and performance requirements of automotive electronic systems.
4. **LED lighting control**:
Due to its low power consumption and high efficiency, this MOSFET is also suitable for LED lighting control systems. It can be used in commercial and industrial lighting applications to support the power management and dimming functions of LED drivers, improving the energy efficiency and reliability of lighting systems.
5. **Power adapter**:
In power adapters and chargers for various electronic devices, 4N80L-TN3-R-VB can be used as a key component of switching power supplies. Its high voltage tolerance and stable switching characteristics ensure reliable operation of the equipment under different input voltage and load conditions.
Through the above examples, the wide application fields of 4N80L-TN3-R-VB MOSFET and its key role in different modules are demonstrated, reflecting its high voltage tolerance and multifunctional performance.
1. **Power Inverters**:
4N80L-TN3-R-VB can be used in power inverters, especially where medium power and high voltage need to be handled. It is suitable for solar inverters, electric vehicle charging stations and UPS (uninterruptible power supply systems), providing stable power conversion and efficient energy management.
2. **Industrial Control Systems**:
In industrial control systems, especially where power and signal processing of high-voltage equipment needs to be controlled and managed, this MOSFET can provide reliable switching functions. It is suitable for factory automation, robotics and power electronic converters to support complex power management and control requirements.
3. **Electric Vehicles**:
In the electric power steering system and battery management system of electric vehicles, 4N80L-TN3-R-VB can be used as a key power switch. Its high voltage withstand capability and low on-resistance ensure high efficiency and long-term reliability of the system, meeting the power density and performance requirements of automotive electronic systems.
4. **LED lighting control**:
Due to its low power consumption and high efficiency, this MOSFET is also suitable for LED lighting control systems. It can be used in commercial and industrial lighting applications to support the power management and dimming functions of LED drivers, improving the energy efficiency and reliability of lighting systems.
5. **Power adapter**:
In power adapters and chargers for various electronic devices, 4N80L-TN3-R-VB can be used as a key component of switching power supplies. Its high voltage tolerance and stable switching characteristics ensure reliable operation of the equipment under different input voltage and load conditions.
Through the above examples, the wide application fields of 4N80L-TN3-R-VB MOSFET and its key role in different modules are demonstrated, reflecting its high voltage tolerance and multifunctional performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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