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4N65H-VB TO251 Product details
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4N65H-VB TO251 MOSFET Product Introduction
The 4N65H-VB is a single N-channel MOSFET in a TO251 package. The device features a drain voltage (VDS) rating of up to 650V and a gate voltage (VGS) rating of ±30V, with a threshold voltage (Vth) of 3.5V. Using Plannar technology, it has a high on-resistance (RDS(ON)) of 2200 milliohms at a VGS of 10V and can provide a maximum drain current (ID) of 4A. It is designed for high voltage applications and has good thermal stability and reliability.
The 4N65H-VB is a single N-channel MOSFET in a TO251 package. The device features a drain voltage (VDS) rating of up to 650V and a gate voltage (VGS) rating of ±30V, with a threshold voltage (Vth) of 3.5V. Using Plannar technology, it has a high on-resistance (RDS(ON)) of 2200 milliohms at a VGS of 10V and can provide a maximum drain current (ID) of 4A. It is designed for high voltage applications and has good thermal stability and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
4N65H-VB TO251 MOSFET Detailed Parameters
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO251 |
| Configuration | Single N-Channel |
| Drain Voltage (VDS) | 650V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) @ VGS=10V | 2200mΩ |
| Drain Current (ID) | 4A |
| Technology | Plannar |
| Parameter | Value |
|-----------|--------------------------------|
| Package | TO251 |
| Configuration | Single N-Channel |
| Drain Voltage (VDS) | 650V |
| Gate Voltage (VGS) | ±30V |
| Threshold Voltage (Vth) | 3.5V |
| On-Resistance (RDS(ON)) @ VGS=10V | 2200mΩ |
| Drain Current (ID) | 4A |
| Technology | Plannar |
Domain and module applications：
4N65H-VB TO251 MOSFET application areas and module examples
Application areas
1. **Electric vehicle charging equipment**: In the charging pile of electric vehicles, it is used for power switches and current control modules to provide efficient energy conversion and stable charging current.
2. **Industrial power supply**: Suitable for high-voltage power management systems in industrial automation equipment to ensure stable and reliable power supply.
3. **Solar inverter**: Inverter modules used in solar power generation systems to achieve efficient energy conversion and maximize energy output.
4. **Power transmission and distribution**: In the power transmission and distribution system, it is used for power switches and current control to ensure system stability and safety.
Module examples
1. **Electric vehicle charging pile**: 4N65H-VB can be used for power switches and control modules in electric vehicle charging piles to achieve efficient battery charging and management.
2. **High-voltage DC-DC converter**: Suitable for high-voltage DC-DC conversion modules in communication base stations and industrial equipment, providing reliable power conversion and management.
3. **Power switch module**: Provides stable switching and efficient energy conversion in various power switch systems, suitable for power electronic equipment and power transmission systems.
With its high voltage rating and stable performance, the 4N65H-VB TO251 MOSFET is an ideal choice for a variety of high-voltage and power applications, meeting the needs of complex power electronic systems and providing reliable power management and control.
Application areas
1. **Electric vehicle charging equipment**: In the charging pile of electric vehicles, it is used for power switches and current control modules to provide efficient energy conversion and stable charging current.
2. **Industrial power supply**: Suitable for high-voltage power management systems in industrial automation equipment to ensure stable and reliable power supply.
3. **Solar inverter**: Inverter modules used in solar power generation systems to achieve efficient energy conversion and maximize energy output.
4. **Power transmission and distribution**: In the power transmission and distribution system, it is used for power switches and current control to ensure system stability and safety.
Module examples
1. **Electric vehicle charging pile**: 4N65H-VB can be used for power switches and control modules in electric vehicle charging piles to achieve efficient battery charging and management.
2. **High-voltage DC-DC converter**: Suitable for high-voltage DC-DC conversion modules in communication base stations and industrial equipment, providing reliable power conversion and management.
3. **Power switch module**: Provides stable switching and efficient energy conversion in various power switch systems, suitable for power electronic equipment and power transmission systems.
With its high voltage rating and stable performance, the 4N65H-VB TO251 MOSFET is an ideal choice for a variety of high-voltage and power applications, meeting the needs of complex power electronic systems and providing reliable power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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