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4N62K3-VB TO252 Product details
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Product Introduction
**Model: 4N62K3-VB TO252**
4N62K3-VB is a single N-channel power MOSFET in TO252 package. It is suitable for low and medium power applications with high drain-source voltage and moderate on-resistance. The device adopts SJ_Multi-EPI technology, combined with multiple epitaxial processes, to provide good electrical performance and reliability.
**Model: 4N62K3-VB TO252**
4N62K3-VB is a single N-channel power MOSFET in TO252 package. It is suitable for low and medium power applications with high drain-source voltage and moderate on-resistance. The device adopts SJ_Multi-EPI technology, combined with multiple epitaxial processes, to provide good electrical performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial process)
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multiple epitaxial process)
Domain and module applications：
Applications and Module Examples
4N62K3-VB Power MOSFET is suitable for low to medium power applications, including but not limited to the following areas and modules:
1. **Power Inverters**:
- In home appliance inverters or small solar inverters, 4N62K3-VB is used to achieve conversion from DC to AC and provide stable power output.
2. **Power Management**:
- **Switching Mode Power Supply (SMPS)**: Used in medium and low power switch mode power supplies to control power switching and power conversion to achieve efficient energy management.
3. **LED Lighting Drivers**:
- In the drive circuit of low power LED lighting systems, 4N62K3-VB can be used as a key component of LED drivers to manage the power and current output of LEDs.
4. **Power Tools**:
- In small power tools, such as electric scissors or electric drills, it is used for motor control and power output management to ensure efficient operation and reliability of the equipment.
5. **Electric Vehicle Charging**:
- In low-power electric vehicle charging piles, it is used for charging control and power management to ensure a safe and efficient electric vehicle charging process.
From the above examples, it can be seen that the 4N62K3-VB power MOSFET has a wide range of applications in low and medium power applications. Its high drain-source voltage and moderate on-resistance make it an ideal choice for a variety of electronic devices.
4N62K3-VB Power MOSFET is suitable for low to medium power applications, including but not limited to the following areas and modules:
1. **Power Inverters**:
- In home appliance inverters or small solar inverters, 4N62K3-VB is used to achieve conversion from DC to AC and provide stable power output.
2. **Power Management**:
- **Switching Mode Power Supply (SMPS)**: Used in medium and low power switch mode power supplies to control power switching and power conversion to achieve efficient energy management.
3. **LED Lighting Drivers**:
- In the drive circuit of low power LED lighting systems, 4N62K3-VB can be used as a key component of LED drivers to manage the power and current output of LEDs.
4. **Power Tools**:
- In small power tools, such as electric scissors or electric drills, it is used for motor control and power output management to ensure efficient operation and reliability of the equipment.
5. **Electric Vehicle Charging**:
- In low-power electric vehicle charging piles, it is used for charging control and power management to ensure a safe and efficient electric vehicle charging process.
From the above examples, it can be seen that the 4N62K3-VB power MOSFET has a wide range of applications in low and medium power applications. Its high drain-source voltage and moderate on-resistance make it an ideal choice for a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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