4N60-VB TO251 Product details
Product introduction:
4N60-VB is a single N-channel MOSFET in TO251 package with high voltage withstand capability and stable performance characteristics, suitable for high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | 2200(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: 4N60-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications:
1. **Power switches and inverters**:
Due to its high drain-source voltage and moderate drain current capability, the 4N60-VB can be used in switching power supplies and inverters. For example, in power adapters, UPS (uninterruptible power supply systems) and solar inverters, it can effectively control and convert electrical energy to provide stable voltage and current output.
2. **Lighting applications**:
In high-voltage LED drive and lighting control systems, the 4N60-VB can be used as a switching element for dimming and power control. Its high voltage withstand capability and low power loss make it an ideal choice in the LED lighting industry.
3. **Electric vehicle charging piles**:
In electric vehicle charging piles, high voltage and high power energy conversion need to be handled. The characteristics of the 4N60-VB make it suitable for use as a key component in the charging pile control circuit to ensure a safe and efficient battery charging process.
4. **Industrial High Voltage Drive**:
In industrial automation and drive systems, such as industrial motor control and robotic systems, this MOSFET can provide stable power output and reliable switching performance, ensuring long-term stable operation of equipment under high load conditions.
5. **High Voltage DC Transmission**:
In high voltage DC transmission systems, such as power electronic converters and smart grid applications, 4N60-VB can be used as a key switching element to help manage and control the conversion and distribution of high voltage power.
From the above examples, we can see that the 4N60-VB MOSFET is widely used in multiple fields and modules, demonstrating its high voltage tolerance and characteristics suitable for various high voltage applications.
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