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4N06L08-VB TO263 Product details
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4N06L08-VB TO263 MOSFET Product Introduction
4N06L08-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO263 package. It has excellent electrical characteristics and is suitable for high current and high performance applications.
4N06L08-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO263 package. It has excellent electrical characteristics and is suitable for high current and high performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
4N06L08-VB TO263 MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
Electric and Hybrid Vehicles
The 4N06L08-VB is widely used in battery management systems (BMS), motor control, and power inverters in electric and hybrid vehicles. It is able to handle high current and high-frequency switching, ensuring high efficiency and safety of electric vehicles.
Industrial Power and Server Power
The low on-resistance and high current capability of the 4N06L08-VB make it an ideal choice in industrial power and server power modules. It is able to provide stable power output while reducing energy consumption and heat, helping to improve the power density and efficiency of the equipment.
Communication Equipment and RF Power Amplifiers
For communication equipment and RF power amplifiers that require high-frequency operation, the 4N06L08-VB provides the advantages of reliable switching characteristics and low losses. It can play an important role in fast data transmission and signal processing, ensuring the stability and performance of the equipment.
Consumer Electronics
In consumer electronics such as laptops, tablets and smartphones, the 4N06L08-VB can be used as a key component for power management and power switching. Its high performance and compact size make it very suitable for the design needs of mobile devices.
From the above application examples, it can be seen that the 4N06L08-VB is a powerful and widely used MOSFET product, suitable for a variety of modern electronic devices and systems that require high current handling and low power consumption.
Electric and Hybrid Vehicles
The 4N06L08-VB is widely used in battery management systems (BMS), motor control, and power inverters in electric and hybrid vehicles. It is able to handle high current and high-frequency switching, ensuring high efficiency and safety of electric vehicles.
Industrial Power and Server Power
The low on-resistance and high current capability of the 4N06L08-VB make it an ideal choice in industrial power and server power modules. It is able to provide stable power output while reducing energy consumption and heat, helping to improve the power density and efficiency of the equipment.
Communication Equipment and RF Power Amplifiers
For communication equipment and RF power amplifiers that require high-frequency operation, the 4N06L08-VB provides the advantages of reliable switching characteristics and low losses. It can play an important role in fast data transmission and signal processing, ensuring the stability and performance of the equipment.
Consumer Electronics
In consumer electronics such as laptops, tablets and smartphones, the 4N06L08-VB can be used as a key component for power management and power switching. Its high performance and compact size make it very suitable for the design needs of mobile devices.
From the above application examples, it can be seen that the 4N06L08-VB is a powerful and widely used MOSFET product, suitable for a variety of modern electronic devices and systems that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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