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4N06H1-VB TO263 Product details
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Product Introduction
4N06H1-VB TO263 is a high performance single N-channel MOSFET in TO-263 package. Designed using advanced Trench technology, the device combines high drain current handling capability with low on-resistance characteristics, making it suitable for a variety of high power applications.
4N06H1-VB TO263 is a high performance single N-channel MOSFET in TO-263 package. Designed using advanced Trench technology, the device combines high drain current handling capability with low on-resistance characteristics, making it suitable for a variety of high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 7(mΩ) | 2.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Package type**: TO-263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 2.5mΩ @ VGS = 10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
In different fields and modules, 4N06H1-VB TO263 shows its superior performance and applicability:
1. **Electric vehicles and industrial motor drives**:
Due to its high drain current of up to 270A and low on-resistance of 2.5mΩ, 4N06H1-VB is suitable as the core component of motor controllers and industrial motor drive modules for electric vehicles (EV). These applications require handling high power loads and efficient power management to ensure efficient operation and long-term reliability of the system.
2. **Industrial power systems**:
In industrial power systems, especially DC-DC converters and DC-AC inverters, the low RDS(ON) characteristics of 4N06H1-VB help reduce energy loss and improve conversion efficiency. It can be used in various industrial automation equipment and control systems to ensure the stability and efficiency of power conversion.
3. **Consumer Electronics**:
In high-power consumer electronics such as computer power supplies, audio amplifiers, and TV monitors, the 4N06H1-VB is able to provide the required high-efficiency and stable power management. Its high drain current handling capability and excellent thermal characteristics make it an ideal choice for providing stable power and high-fidelity performance.
4. **Power Tools and High-Performance Power Supplies**:
The 4N06H1-VB is also suitable for a variety of power tools that require high power output and high-efficiency control, such as electric lawn mowers, electric saws, and high-pressure water pumps. It can provide reliable power output and long-term stability in a variety of working environments to meet the needs of industrial and professional applications.
In summary, the 4N06H1-VB TO263 MOSFET provides a powerful solution for modern power electronics and control systems through its excellent performance and wide range of applications, suitable for a variety of industrial, consumer and automotive electronics fields.
In different fields and modules, 4N06H1-VB TO263 shows its superior performance and applicability:
1. **Electric vehicles and industrial motor drives**:
Due to its high drain current of up to 270A and low on-resistance of 2.5mΩ, 4N06H1-VB is suitable as the core component of motor controllers and industrial motor drive modules for electric vehicles (EV). These applications require handling high power loads and efficient power management to ensure efficient operation and long-term reliability of the system.
2. **Industrial power systems**:
In industrial power systems, especially DC-DC converters and DC-AC inverters, the low RDS(ON) characteristics of 4N06H1-VB help reduce energy loss and improve conversion efficiency. It can be used in various industrial automation equipment and control systems to ensure the stability and efficiency of power conversion.
3. **Consumer Electronics**:
In high-power consumer electronics such as computer power supplies, audio amplifiers, and TV monitors, the 4N06H1-VB is able to provide the required high-efficiency and stable power management. Its high drain current handling capability and excellent thermal characteristics make it an ideal choice for providing stable power and high-fidelity performance.
4. **Power Tools and High-Performance Power Supplies**:
The 4N06H1-VB is also suitable for a variety of power tools that require high power output and high-efficiency control, such as electric lawn mowers, electric saws, and high-pressure water pumps. It can provide reliable power output and long-term stability in a variety of working environments to meet the needs of industrial and professional applications.
In summary, the 4N06H1-VB TO263 MOSFET provides a powerful solution for modern power electronics and control systems through its excellent performance and wide range of applications, suitable for a variety of industrial, consumer and automotive electronics fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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