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4N0609-VB TO263 Product details

Product introduction:

4N0609-VB TO263 MOSFET Product Introduction

The 4N0609-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO263 package. It has excellent performance characteristics, including low on-resistance and high current handling capability, and is suitable for electronic applications requiring high performance and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
4N0609-VB TO263 MOSFET Detailed parameter description

- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench

Domain and module applications:

Applications and module examples


Power modules and power converters
Due to its low on-resistance and high current capability, the 4N0609-VB excels in power modules and power converters. It can be used in server power supplies, industrial power supplies, and power management systems that require high efficiency and low losses.


Electric vehicles and battery management
In battery management systems and motor control in electric vehicles, the 4N0609-VB is able to handle large currents and high voltages, ensuring high efficiency and safety of the system. It plays an important role in electric vehicles, hybrid vehicles, and electric motorcycles.


Industrial automation and automatic control
In industrial automation equipment and automatic control systems, such as PLCs (programmable logic controllers) and inverters, the 4N0609-VB is able to provide fast and reliable switching operations, helping to improve production efficiency and equipment reliability.


HIGH FREQUENCY APPLICATIONS
Due to its excellent switching characteristics and low on-resistance, the 4N0609-VB is suitable for applications that require high-frequency operation, such as power amplification and switching control in communications equipment, RF power amplifiers, and radar systems.

From the above examples, it can be seen that the 4N0609-VB is a versatile, high-performance MOSFET suitable for a variety of modern electronic devices and systems that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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