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4N04H1-VB Product details

Product introduction:

4N04H1-VB MOSFET Product Introduction

4N04H1-VB is a dual N-channel MOSFET in TO263-7L package, manufactured by VBsemi. It has low on-resistance and high drain-source voltage characteristics, suitable for applications requiring high power handling and low conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Dual-N+N 40V 3V 200A 1(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Dual-N+N 40V 3V 200A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Dual-N+N 40V 3V 200A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Dual-N+N
4N04H1-VB MOSFET detailed parameter description

- **Package**: TO263-7L
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: 20V (±V)
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 1mΩ
- **Drain current (ID)**: 200A
- **Technology**: Trench

Domain and module applications:

4N04H1-VB MOSFET application areas and module examples

1. **Electric Vehicle**:
- **Electric Vehicles and Electric Bicycles**: Power control and battery management systems for electric vehicles, providing efficient power conversion and driving performance.

2. **Industrial Equipment**:
- **Power System**: High-power switching power supplies and inverters for industrial equipment, ensuring efficient operation and stability of equipment.

3. **Server and Data Center**:
- **Server Power Management**: In large data centers and servers, it is used for high-density power distribution and efficiency optimization, improving data processing capabilities and energy saving effects.

4. **Power Inverter**:
- **Solar Inverter**: As a key component of solar inverters, it converts DC power into AC power, supporting the stable output of renewable energy and grid connection.

4N04H1-VB has broad application prospects in electronic and power applications requiring high power and low loss due to its high current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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