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4N0401-VB TO220 Product details

Product introduction:

Product Introduction

4N0401-VB is a single channel N-type MOSFET designed with advanced Trench technology and packaged in TO220. It has a drain-source voltage rating of 40V and is suitable for electronic applications with high power requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 3V 180A 15(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: 20 (±V)
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 180A
- **Technology**: Trench

Domain and module applications:

Application fields and modules

4N0401-VB is suitable for a variety of electronic applications with high power and low on-resistance requirements, such as:

1. **Power switch**: In high-power power switches, 4N0401-VB can provide low on-resistance and efficient power conversion capabilities, suitable for industrial equipment and high-performance power systems.

2. **Electric vehicles**: As part of the electric vehicle motor drive, 4N0401-VB can withstand high currents and effectively manage power, supporting efficient energy conversion and drive control of electric vehicles.

3. **Industrial automation**: In industrial control and automation systems, 4N0401-VB can be used as a high-power switch and power management device to ensure reliable operation of equipment and efficient energy management.

4. **High-performance power modules**: In power modules that require high power density and high-efficiency energy conversion, 4N0401-VB can provide stable voltage output and excellent energy conversion efficiency.

4N0401-VB MOSFET is suitable for a variety of electronic devices and systems requiring high power and high efficiency conversion due to its high current carrying capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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