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4525GEH-VB Product details
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1. 4525GEH-VB Product Introduction
4525GEH-VB is a high-performance common-source N+P channel MOSFET in TO252-4L package. It integrates an N-channel and a P-channel MOSFET to provide efficient power switching and low on-resistance characteristics. Manufactured using advanced trench technology, the 4525GEH-VB is suitable for applications requiring high current handling capability and stability.
4525GEH-VB is a high-performance common-source N+P channel MOSFET in TO252-4L package. It integrates an N-channel and a P-channel MOSFET to provide efficient power switching and low on-resistance characteristics. Manufactured using advanced trench technology, the 4525GEH-VB is suitable for applications requiring high current handling capability and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 14/14(mΩ) | 16/16(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. 4525GEH-VB Detailed parameter description
- **Package type**: TO252-4L
- **Configuration**: Common source N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: N-channel: 1.8V, P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: N-channel: 14mΩ, P-channel: 14mΩ
- @VGS=10V: N-channel: 16mΩ, P-channel: 16mΩ
- **Drain current (ID)**: ±50A
- **Technology**: Trench
- **Package type**: TO252-4L
- **Configuration**: Common source N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: N-channel: 1.8V, P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: N-channel: 14mΩ, P-channel: 14mΩ
- @VGS=10V: N-channel: 16mΩ, P-channel: 16mΩ
- **Drain current (ID)**: ±50A
- **Technology**: Trench
Domain and module applications：
3. Applications and module examples
1. **Electric Vehicles**:
- The high current handling capability of the 4525GEH-VB makes it ideal for motor drive devices in electric and hybrid vehicles. It can support efficient energy conversion and motor control, improving vehicle performance and endurance.
2. **Power Modules**:
- In power modules that require high power density and reliability, this MOSFET can be used in DC-DC converters and switching power supplies. Its low on-resistance and high current capacity help reduce energy loss and improve system efficiency.
3. **Industrial Automation**:
- In industrial control and automation systems, the 4525GEH-VB can be used as a switch and power amplifier to control high current loads and drive motors. Its stability and reliability ensure long-term stable operation.
4. **Battery Management System**:
- In the power battery management system, this MOSFET can be used in battery charge and discharge control and protection circuits to effectively manage the power output and current flow of the battery pack to ensure system safety and long life.
Due to its high current handling capability and stable electrical characteristics, the 4525GEH-VB can provide reliable solutions in a variety of fields to support the design and implementation of complex electronic systems.
1. **Electric Vehicles**:
- The high current handling capability of the 4525GEH-VB makes it ideal for motor drive devices in electric and hybrid vehicles. It can support efficient energy conversion and motor control, improving vehicle performance and endurance.
2. **Power Modules**:
- In power modules that require high power density and reliability, this MOSFET can be used in DC-DC converters and switching power supplies. Its low on-resistance and high current capacity help reduce energy loss and improve system efficiency.
3. **Industrial Automation**:
- In industrial control and automation systems, the 4525GEH-VB can be used as a switch and power amplifier to control high current loads and drive motors. Its stability and reliability ensure long-term stable operation.
4. **Battery Management System**:
- In the power battery management system, this MOSFET can be used in battery charge and discharge control and protection circuits to effectively manage the power output and current flow of the battery pack to ensure system safety and long life.
Due to its high current handling capability and stable electrical characteristics, the 4525GEH-VB can provide reliable solutions in a variety of fields to support the design and implementation of complex electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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