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4511GH-A-VB Product details
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1. Product Introduction
4511GH-A-VB is a MOSFET produced by VBsemi, using TO252-4L package. It is a common drain dual channel (N-channel and P-channel) MOSFET with a drain-source voltage (VDS) of up to ±60V, a gate-source voltage (VGS) of ±20V, and excellent electrical performance and stability. This device is suitable for power management and switching circuits requiring high voltage and high current.
4511GH-A-VB is a MOSFET produced by VBsemi, using TO252-4L package. It is a common drain dual channel (N-channel and P-channel) MOSFET with a drain-source voltage (VDS) of up to ±60V, a gate-source voltage (VGS) of ±20V, and excellent electrical performance and stability. This device is suitable for power management and switching circuits requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 33/60(mΩ) | 30/50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. Detailed parameter description
- **Package form**: TO252-4L
- **Configuration**: Common Drain, dual channel (N channel + P channel)
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 33mΩ (N channel), 60mΩ (P channel)
- When VGS=10V: 30mΩ (N channel), 50mΩ (P channel)
- **Drain current (ID)**: 35A (N channel), -19A (P channel)
- **Technology Type**: Trench
- **Package form**: TO252-4L
- **Configuration**: Common Drain, dual channel (N channel + P channel)
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- When VGS=4.5V: 33mΩ (N channel), 60mΩ (P channel)
- When VGS=10V: 30mΩ (N channel), 50mΩ (P channel)
- **Drain current (ID)**: 35A (N channel), -19A (P channel)
- **Technology Type**: Trench
Domain and module applications：
3. Application fields and module examples
4511GH-A-VB MOSFET is widely used in the following fields and modules:
1. **Power inverter**:
- In industrial and commercial power inverters, the high drain-source voltage and low on-resistance characteristics of 4511GH-A-VB make it an ideal switching device. It is able to handle high voltage and high current while providing efficient energy conversion.
2. **Electric vehicle**:
- As a key component in the drive circuit of electric vehicles, 4511GH-A-VB can be used for motor control and battery management system (BMS) of electric vehicles and hybrid vehicles to provide efficient energy conversion and driving performance.
3. **Industrial automation**:
- In power management and motor drive of industrial automation equipment, 4511GH-A-VB can be used to control and regulate various motors and actuators to ensure stable operation and high efficiency of the system.
4. **Power Switch**:
- In high-performance power switch systems, such as server power supply units and communication base stations, the 4511GH-A-VB can provide fast switching speeds and low losses to ensure system reliability and stability.
5. **Aerospace Applications**:
- Due to its high withstand voltage and reliability, the 4511GH-A-VB is also suitable for aerospace applications, including power management and control in avionics and satellite communication systems.
By using the 4511GH-A-VB MOSFET, engineers can design electronic circuits with excellent performance and wide application to meet the needs of a variety of complex applications.
4511GH-A-VB MOSFET is widely used in the following fields and modules:
1. **Power inverter**:
- In industrial and commercial power inverters, the high drain-source voltage and low on-resistance characteristics of 4511GH-A-VB make it an ideal switching device. It is able to handle high voltage and high current while providing efficient energy conversion.
2. **Electric vehicle**:
- As a key component in the drive circuit of electric vehicles, 4511GH-A-VB can be used for motor control and battery management system (BMS) of electric vehicles and hybrid vehicles to provide efficient energy conversion and driving performance.
3. **Industrial automation**:
- In power management and motor drive of industrial automation equipment, 4511GH-A-VB can be used to control and regulate various motors and actuators to ensure stable operation and high efficiency of the system.
4. **Power Switch**:
- In high-performance power switch systems, such as server power supply units and communication base stations, the 4511GH-A-VB can provide fast switching speeds and low losses to ensure system reliability and stability.
5. **Aerospace Applications**:
- Due to its high withstand voltage and reliability, the 4511GH-A-VB is also suitable for aerospace applications, including power management and control in avionics and satellite communication systems.
By using the 4511GH-A-VB MOSFET, engineers can design electronic circuits with excellent performance and wide application to meet the needs of a variety of complex applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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