Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
13/28(mΩ) |
11/21(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N-Channel), -1.7V (P-Channel)
- **On-resistance (RDS(ON))**:
- 13mΩ (N-Channel) / 28mΩ (P-Channel) @VGS=4.5V
- 11mΩ (N-Channel) / 21mΩ (P-Channel) @VGS=10V
- **Drain current (ID)**: 10A (N-Channel) / -8A (P-Channel)
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The 4502M-VB Dual N+P-Channel MOSFET is suitable for a variety of applications and modules, including:
1. **Power Management Module**: The device performs well in power management modules, especially in DC-DC converters and voltage regulators, providing efficient power conversion and stable output.
2. **Motor Driver**: In motor control applications, the 4502M-VB can efficiently drive the motor, reduce energy consumption, and improve the overall efficiency of the system.
3. **Load Switch**: Due to its low on-resistance and high current handling capability, this MOSFET is very suitable as a load switch and is widely used in portable electronic devices and industrial control systems.
4. **Protection Circuit**: The 4502M-VB can also be used in protection circuits to prevent overvoltage and overcurrent conditions and ensure safe operation of the system.
5. **Consumer Electronics**: In smartphones, tablets, and other consumer electronics, this MOSFET can be used in battery management systems and fast charging circuits to improve charging efficiency and device performance.
Through its advanced trench technology and excellent electrical performance, the 4502M-VB provides a reliable solution in these applications, meeting the needs of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
