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4418GJ-VB Product details
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1. 4418GJ-VB Product Introduction
4418GJ-VB is a single N-channel MOSFET in TO251 package. The product has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.7V, and a drain current (ID) of 50A. 4418GJ-VB uses trench technology and has high performance and reliability.
4418GJ-VB is a single N-channel MOSFET in TO251 package. The product has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.7V, and a drain current (ID) of 50A. 4418GJ-VB uses trench technology and has high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. 4418GJ-VB Detailed Parameters
| Parameters | Value |
|--------------------|--------------------------|
| Package | TO251 |
| Configuration | Single N-channel |
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 9mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 7mΩ @ VGS=10V |
| Drain current (ID) | 50A |
| Technology | Trench technology (Trench) |
| Parameters | Value |
|--------------------|--------------------------|
| Package | TO251 |
| Configuration | Single N-channel |
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 9mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 7mΩ @ VGS=10V |
| Drain current (ID) | 50A |
| Technology | Trench technology (Trench) |
Domain and module applications：
III. 4418GJ-VB Application Fields and Module Examples
1. **Power Management Module**:
4418GJ-VB is suitable for high-performance power management modules such as server power supplies and industrial power supplies, with low on-resistance and high drain current, which helps improve energy efficiency.
2. **Electric Vehicle**:
In the power management system of electric vehicles, 4418GJ-VB can be used for drive control modules to help achieve efficient power conversion and drive performance.
3. **Industrial Automation**:
4418GJ-VB is suitable for high-voltage control and switch modules in industrial automation, providing high performance and reliability to meet the needs of complex industrial environments.
4. **LED Lighting**:
Due to its low on-resistance and high drain current, 4418GJ-VB is suitable for high-performance LED drivers, providing efficient energy management and long life.
5. **Communication equipment**:
4418GJ-VB can be used for high-performance switches and control modules in communication equipment, providing stable and reliable power control and efficient energy consumption.
In summary, 4418GJ-VB MOSFET has a wide range of application prospects and can play an important role in many fields, especially suitable for applications that require high-performance switching devices.
1. **Power Management Module**:
4418GJ-VB is suitable for high-performance power management modules such as server power supplies and industrial power supplies, with low on-resistance and high drain current, which helps improve energy efficiency.
2. **Electric Vehicle**:
In the power management system of electric vehicles, 4418GJ-VB can be used for drive control modules to help achieve efficient power conversion and drive performance.
3. **Industrial Automation**:
4418GJ-VB is suitable for high-voltage control and switch modules in industrial automation, providing high performance and reliability to meet the needs of complex industrial environments.
4. **LED Lighting**:
Due to its low on-resistance and high drain current, 4418GJ-VB is suitable for high-performance LED drivers, providing efficient energy management and long life.
5. **Communication equipment**:
4418GJ-VB can be used for high-performance switches and control modules in communication equipment, providing stable and reliable power control and efficient energy consumption.
In summary, 4418GJ-VB MOSFET has a wide range of application prospects and can play an important role in many fields, especially suitable for applications that require high-performance switching devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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