中文
English
43NM60N-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**Model:** 43NM60N-VB
**Package:** TO247
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 75mΩ @ VGS=10V
- Drain current (ID): 47A
- Technology: SJ_Multi-EPI (Multiple Epitaxial Structure)
**Model:** 43NM60N-VB
**Package:** TO247
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 75mΩ @ VGS=10V
- Drain current (ID): 47A
- Technology: SJ_Multi-EPI (Multiple Epitaxial Structure)
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter name | Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 75mΩ @ VGS=10V |
| Drain current (ID) | 47A |
| Power dissipation (Ptot) | 320W |
| Input capacitance (Ciss) | 5400pF |
| Output capacitance (Coss) | 720pF |
| Reverse transfer capacitance (Crss) | 190pF |
| Turn-on time (ton) | 37ns |
| Turn-off time (toff) | 111ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO247 |
| Parameter name | Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 75mΩ @ VGS=10V |
| Drain current (ID) | 47A |
| Power dissipation (Ptot) | 320W |
| Input capacitance (Ciss) | 5400pF |
| Output capacitance (Coss) | 720pF |
| Reverse transfer capacitance (Crss) | 190pF |
| Turn-on time (ton) | 37ns |
| Turn-off time (toff) | 111ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO247 |
Domain and module applications：
Application fields and module examples
1. **Industrial power supply**: 43NM60N-VB is suitable for industrial power supply systems such as UPS, welding machines and industrial electric vehicles, ensuring high efficiency and reliability of the system.
2. **Electric vehicles**: In the motor drive system of electric vehicles, this MOSFET can be used in modules such as electric vehicle controllers, charging piles and battery management systems to provide efficient power conversion and safety.
3. **Power switch**: In high-voltage power switch modules, this MOSFET can be used for high-efficiency switching power supplies and inverters to provide stable power output.
4. **Medical equipment**: Suitable for power management modules of medical equipment such as X-ray machines, medical power supplies and laser equipment, providing efficient power conversion and stable power output.
5. **Communication equipment**: In communication equipment, this MOSFET can be used in power amplifiers, RF switches and power control modules to ensure the stability and efficiency of the equipment.
Through these specific examples of application fields and modules, it can be seen that 43NM60N-VB TO247 MOSFET has been widely used in many fields due to its high power and high efficiency characteristics.
1. **Industrial power supply**: 43NM60N-VB is suitable for industrial power supply systems such as UPS, welding machines and industrial electric vehicles, ensuring high efficiency and reliability of the system.
2. **Electric vehicles**: In the motor drive system of electric vehicles, this MOSFET can be used in modules such as electric vehicle controllers, charging piles and battery management systems to provide efficient power conversion and safety.
3. **Power switch**: In high-voltage power switch modules, this MOSFET can be used for high-efficiency switching power supplies and inverters to provide stable power output.
4. **Medical equipment**: Suitable for power management modules of medical equipment such as X-ray machines, medical power supplies and laser equipment, providing efficient power conversion and stable power output.
5. **Communication equipment**: In communication equipment, this MOSFET can be used in power amplifiers, RF switches and power control modules to ensure the stability and efficiency of the equipment.
Through these specific examples of application fields and modules, it can be seen that 43NM60N-VB TO247 MOSFET has been widely used in many fields due to its high power and high efficiency characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
