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42MEM8205-VB Product details
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Product Introduction
**Model:** 42MEM8205-VB
**Package:** SOT23-6
**Configuration:** Dual N+N channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 20V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance (RDS(ON)): 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V
- Drain current (ID): 6A
- Technology: Trench
**Model:** 42MEM8205-VB
**Package:** SOT23-6
**Configuration:** Dual N+N channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 20V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance (RDS(ON)): 28mΩ @ VGS=2.5V, 24mΩ @ VGS=4.5V
- Drain current (ID): 6A
- Technology: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
| Parameter name| Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| | 24mΩ @ VGS=4.5V |
| Drain current (ID) | 6A |
| Power dissipation (Ptot) | 1.25W |
| Input capacitance (Ciss) | 650pF |
| Output capacitance (Coss) | 110pF |
| Reverse transfer capacitance (Crss) | 70pF |
| Turn-on time (ton) | 4ns |
| Turn-off time (toff) | 12ns |
| Operating temperature range (Tj) | -55°C ~ 150°C |
| Package type | SOT23-6 |
| Parameter name| Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| | 24mΩ @ VGS=4.5V |
| Drain current (ID) | 6A |
| Power dissipation (Ptot) | 1.25W |
| Input capacitance (Ciss) | 650pF |
| Output capacitance (Coss) | 110pF |
| Reverse transfer capacitance (Crss) | 70pF |
| Turn-on time (ton) | 4ns |
| Turn-off time (toff) | 12ns |
| Operating temperature range (Tj) | -55°C ~ 150°C |
| Package type | SOT23-6 |
Domain and module applications：
Application fields and module examples
1. **Portable electronic devices**: 42MEM8205-VB is suitable for power management modules of portable electronic devices such as smartphones, tablets and portable music players. Its low on-resistance and high efficiency make it very suitable for battery-powered devices, extending battery life.
2. **Power management**: In power management applications, this MOSFET can be used in modules such as DC-DC converters and load switches. Its dual N+N channel configuration enables it to provide efficient power conversion and distribution.
3. **Computers and servers**: Suitable for computer motherboards, graphics cards and server power management modules to ensure system stability and efficient operation.
4. **Consumer electronics**: In consumer electronics, this MOSFET can be used in power management modules of home appliances, smart home devices and audio and video equipment, providing efficient power conversion and stable power output.
5. **Industrial Automation**: In the field of industrial automation, this MOSFET can be used in industrial controllers, sensor interfaces and other low-voltage industrial applications to ensure the reliability and long life of the equipment.
Through these specific examples of application areas and modules, it can be seen that the 42MEM8205-VB SOT23-6 MOSFET has been widely used in many fields due to its high power and high efficiency characteristics.
1. **Portable electronic devices**: 42MEM8205-VB is suitable for power management modules of portable electronic devices such as smartphones, tablets and portable music players. Its low on-resistance and high efficiency make it very suitable for battery-powered devices, extending battery life.
2. **Power management**: In power management applications, this MOSFET can be used in modules such as DC-DC converters and load switches. Its dual N+N channel configuration enables it to provide efficient power conversion and distribution.
3. **Computers and servers**: Suitable for computer motherboards, graphics cards and server power management modules to ensure system stability and efficient operation.
4. **Consumer electronics**: In consumer electronics, this MOSFET can be used in power management modules of home appliances, smart home devices and audio and video equipment, providing efficient power conversion and stable power output.
5. **Industrial Automation**: In the field of industrial automation, this MOSFET can be used in industrial controllers, sensor interfaces and other low-voltage industrial applications to ensure the reliability and long life of the equipment.
Through these specific examples of application areas and modules, it can be seen that the 42MEM8205-VB SOT23-6 MOSFET has been widely used in many fields due to its high power and high efficiency characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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