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4002J-VB Product details
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Product Introduction
**Model:** 4002J-VB
**Package:** TO251
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 4300mΩ @ VGS=10V
- Drain current (ID): 2A
- Technology: Plannar
**Model:** 4002J-VB
**Package:** TO251
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 4300mΩ @ VGS=10V
- Drain current (ID): 2A
- Technology: Plannar
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameter name | Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 4300mΩ @ VGS=10V |
| Drain current (ID) | 2A |
| Power dissipation (Ptot) | 75W |
| Input capacitance (Ciss) | 320pF |
| Output capacitance (Coss) | 50pF |
| Reverse transfer capacitance (Crss) | 30pF |
| Turn-on time (ton) | 40ns |
| Turn-off time (toff) | 170ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO251 |
| Parameter name | Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 4300mΩ @ VGS=10V |
| Drain current (ID) | 2A |
| Power dissipation (Ptot) | 75W |
| Input capacitance (Ciss) | 320pF |
| Output capacitance (Coss) | 50pF |
| Reverse transfer capacitance (Crss) | 30pF |
| Turn-on time (ton) | 40ns |
| Turn-off time (toff) | 170ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO251 |
Domain and module applications：
Application fields and module examples
1. **Lighting**: 4002J-VB is suitable for modules such as LED lighting drivers, indoor and outdoor lighting systems, and its high drain-source voltage and low on-resistance characteristics make it perform well in the lighting field.
2. **Power management**: In the field of power management, this MOSFET can be used in modules such as power adapters, UPS systems, and solar inverters, providing efficient power conversion and stable power management.
3. **Medical equipment**: In medical equipment, this MOSFET can be used in medical imaging equipment, medical monitoring equipment, and medical diagnostic equipment, etc., with high reliability and high voltage resistance.
4. **Electric vehicle charging piles**: In electric vehicle charging piles, this MOSFET can be used for power management and battery charging control of charging piles to ensure high efficiency and safety of charging piles.
5. **Industrial control**: In industrial control systems, this MOSFET can be used in modules such as industrial motor controllers, inverters, and industrial power supplies, providing efficient power conversion and stable power management.
Through these specific examples of application fields and modules, it can be seen that 4002J-VB TO251 MOSFET has been widely used in many fields due to its high voltage resistance, high reliability and high efficiency.
1. **Lighting**: 4002J-VB is suitable for modules such as LED lighting drivers, indoor and outdoor lighting systems, and its high drain-source voltage and low on-resistance characteristics make it perform well in the lighting field.
2. **Power management**: In the field of power management, this MOSFET can be used in modules such as power adapters, UPS systems, and solar inverters, providing efficient power conversion and stable power management.
3. **Medical equipment**: In medical equipment, this MOSFET can be used in medical imaging equipment, medical monitoring equipment, and medical diagnostic equipment, etc., with high reliability and high voltage resistance.
4. **Electric vehicle charging piles**: In electric vehicle charging piles, this MOSFET can be used for power management and battery charging control of charging piles to ensure high efficiency and safety of charging piles.
5. **Industrial control**: In industrial control systems, this MOSFET can be used in modules such as industrial motor controllers, inverters, and industrial power supplies, providing efficient power conversion and stable power management.
Through these specific examples of application fields and modules, it can be seen that 4002J-VB TO251 MOSFET has been widely used in many fields due to its high voltage resistance, high reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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