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3STS8235-VB Product details
Back to previous pageProduct introduction：
1. 3STS8235-VB Product Introduction
3STS8235-VB is a dual N+N channel MOSFET in SOT23-6 package. The product has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 0.5~1.5V, and a drain current (ID) of 6A. 3STS8235-VB adopts trench technology to provide high performance and reliability.
3STS8235-VB is a dual N+N channel MOSFET in SOT23-6 package. The product has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 0.5~1.5V, and a drain current (ID) of 6A. 3STS8235-VB adopts trench technology to provide high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. 3STS8235-VB Detailed parameter description
| Parameter| Value|
|--------------------|--------------------------|
| Package| SOT23-6 |
| Configuration| Dual N+N channel|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| On-resistance (RDS(ON)) | 24mΩ @ VGS=4.5V |
| Drain current (ID) | 6A |
| Technology| Trench technology (Trench) |
| Parameter| Value|
|--------------------|--------------------------|
| Package| SOT23-6 |
| Configuration| Dual N+N channel|
| Drain-source voltage (VDS) | 20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| On-resistance (RDS(ON)) | 24mΩ @ VGS=4.5V |
| Drain current (ID) | 6A |
| Technology| Trench technology (Trench) |
Domain and module applications：
3. 3STS8235-VB Application Fields and Module Examples
1. **Mobile Devices**:
Due to its small package and low power consumption, 3STS8235-VB is suitable for power management and power amplifiers in mobile devices.
2. **Communication Equipment**:
In communication equipment, 3STS8235-VB can be used for RF power amplifiers and signal conditioning devices, which helps to improve communication quality and stability.
3. **Power Management Modules**:
3STS8235-VB is suitable for various types of power management modules, such as DC-DC converters and battery management systems, providing efficient energy consumption and high performance.
4. **Industrial Automation**:
In industrial control systems, 3STS8235-VB can be used for switches and control devices, providing precise control and efficient operation.
In summary, 3STS8235-VB MOSFET has broad application prospects and can play an important role in many fields, especially suitable for applications requiring high-performance switching devices.
1. **Mobile Devices**:
Due to its small package and low power consumption, 3STS8235-VB is suitable for power management and power amplifiers in mobile devices.
2. **Communication Equipment**:
In communication equipment, 3STS8235-VB can be used for RF power amplifiers and signal conditioning devices, which helps to improve communication quality and stability.
3. **Power Management Modules**:
3STS8235-VB is suitable for various types of power management modules, such as DC-DC converters and battery management systems, providing efficient energy consumption and high performance.
4. **Industrial Automation**:
In industrial control systems, 3STS8235-VB can be used for switches and control devices, providing precise control and efficient operation.
In summary, 3STS8235-VB MOSFET has broad application prospects and can play an important role in many fields, especially suitable for applications requiring high-performance switching devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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