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3PN0402-VB TO263 Product details
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3PN0402-VB TO263 MOSFET Product Introduction
The 3PN0402-VB is a high-performance single N-channel field effect transistor designed for high-efficiency energy management in a variety of electronic applications. It uses a TO-263 package with excellent thermal performance and reliability, suitable for a variety of harsh environments. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 3V, ensuring ease of use in low-voltage circuits. The 3PN0402-VB uses Trench technology to provide low on-resistance, enhance energy efficiency and reduce heat generation.
The 3PN0402-VB is a high-performance single N-channel field effect transistor designed for high-efficiency energy management in a variety of electronic applications. It uses a TO-263 package with excellent thermal performance and reliability, suitable for a variety of harsh environments. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 3V, ensuring ease of use in low-voltage circuits. The 3PN0402-VB uses Trench technology to provide low on-resistance, enhance energy efficiency and reduce heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO-263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 2.5mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **ID (continuous drain current)**: 150A
- **Technology**: Trench
- **Package**: TO-263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 2.5mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **ID (continuous drain current)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **Power Management**: 3PN0402-VB can be widely used in various power management circuits, such as switching power supplies and voltage regulators, to improve circuit efficiency and reduce size.
2. **Motor Drive**: In motor drive circuits, this MOSFET can be used as a control switch for the motor to achieve high-efficiency motor control.
3. **Automotive Electronics**: Due to its high current and low on-resistance characteristics, it is suitable for automotive electronics such as electric vehicle chargers, electric vehicle controllers, etc.
4. **Industrial Automation**: In industrial control systems, 3PN0402-VB can be used in various industrial automation equipment to improve system reliability and efficiency.
5. **Medical Equipment**: Due to its high performance and reliability, it can be used in various medical equipment, such as medical power supplies, medical imaging equipment, etc.
By using 3PN0402-VB MOSFET in these fields, designers can achieve efficient and reliable circuit design to meet the needs of different applications.
1. **Power Management**: 3PN0402-VB can be widely used in various power management circuits, such as switching power supplies and voltage regulators, to improve circuit efficiency and reduce size.
2. **Motor Drive**: In motor drive circuits, this MOSFET can be used as a control switch for the motor to achieve high-efficiency motor control.
3. **Automotive Electronics**: Due to its high current and low on-resistance characteristics, it is suitable for automotive electronics such as electric vehicle chargers, electric vehicle controllers, etc.
4. **Industrial Automation**: In industrial control systems, 3PN0402-VB can be used in various industrial automation equipment to improve system reliability and efficiency.
5. **Medical Equipment**: Due to its high performance and reliability, it can be used in various medical equipment, such as medical power supplies, medical imaging equipment, etc.
By using 3PN0402-VB MOSFET in these fields, designers can achieve efficient and reliable circuit design to meet the needs of different applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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