中文
English
3N70L-TN3-R-VB Product details
Back to previous pageProduct introduction：
3N70L-TN3-R-VB TO252 MOSFET Product Introduction
The 3N70L-TN3-R-VB is a high-performance single N-channel field effect transistor designed for efficient energy management in a variety of electronic applications. With a TO-252 package, this MOSFET has excellent thermal performance and reliability, suitable for a variety of harsh environments. With a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 3.5V, ensuring easy use in low-voltage circuits. The 3N70L-TN3-R-VB adopts SJ_Multi-EPI technology, providing low on-resistance, enhancing energy efficiency and reducing heat generation.
The 3N70L-TN3-R-VB is a high-performance single N-channel field effect transistor designed for efficient energy management in a variety of electronic applications. With a TO-252 package, this MOSFET has excellent thermal performance and reliability, suitable for a variety of harsh environments. With a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 3.5V, ensuring easy use in low-voltage circuits. The 3N70L-TN3-R-VB adopts SJ_Multi-EPI technology, providing low on-resistance, enhancing energy efficiency and reducing heat generation.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 700V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2400mΩ @ VGS = 10V
- **ID (continuous drain current)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO-252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 700V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2400mΩ @ VGS = 10V
- **ID (continuous drain current)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application Examples
1. **Power Switch**: 3N70L-TN3-R-VB can be used as a power switch in switching power supplies and converters to effectively control and convert electrical energy and improve system efficiency.
2. **Lighting System**: In LED lighting systems, this MOSFET can be used as a driver to control the brightness and working mode of LEDs, providing efficient lighting solutions.
3. **Electric Vehicle Charger**: Due to its high withstand voltage and low on-resistance, 3N70L-TN3-R-VB is suitable for power switches in electric vehicle chargers to achieve efficient power conversion.
4. **Industrial Motor Control**: In the industrial field, this MOSFET can be used to control various types of motors to improve the efficiency and reliability of industrial equipment.
5. **UPS System**: In an uninterruptible power supply system, 3N70L-TN3-R-VB can be used as a power switch to ensure reliable power backup during power outages.
By using the 3N70L-TN3-R-VB MOSFET in these applications, designers can achieve improved performance, energy efficiency and reliability, ensuring optimal operation of their electronic systems.
1. **Power Switch**: 3N70L-TN3-R-VB can be used as a power switch in switching power supplies and converters to effectively control and convert electrical energy and improve system efficiency.
2. **Lighting System**: In LED lighting systems, this MOSFET can be used as a driver to control the brightness and working mode of LEDs, providing efficient lighting solutions.
3. **Electric Vehicle Charger**: Due to its high withstand voltage and low on-resistance, 3N70L-TN3-R-VB is suitable for power switches in electric vehicle chargers to achieve efficient power conversion.
4. **Industrial Motor Control**: In the industrial field, this MOSFET can be used to control various types of motors to improve the efficiency and reliability of industrial equipment.
5. **UPS System**: In an uninterruptible power supply system, 3N70L-TN3-R-VB can be used as a power switch to ensure reliable power backup during power outages.
By using the 3N70L-TN3-R-VB MOSFET in these applications, designers can achieve improved performance, energy efficiency and reliability, ensuring optimal operation of their electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
