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3N65L-TF1-T-VB Product details
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Product Introduction
**Model:** 3N65L-TF1-T-VB
**Package:** TO220F
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 2560mΩ @ VGS=10V
- Drain current (ID): 4A
- Technology: Plannar
**Model:** 3N65L-TF1-T-VB
**Package:** TO220F
**Configuration:** Single N-channel MOSFET
**Main parameters:**
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 2560mΩ @ VGS=10V
- Drain current (ID): 4A
- Technology: Plannar
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
| Parameter name| Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2560mΩ @ VGS=10V |
| Drain current (ID) | 4A |
| Power dissipation (Ptot) | 40W |
| Input capacitance (Ciss) | 670pF |
| Output capacitance (Coss) | 70pF |
| Reverse transfer capacitance (Crss) | 18pF |
| Turn-on time (ton) | 20ns |
| Turn-off time (toff) | 100ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO220F |
| Parameter name| Parameter value|
|-----------------|--------------------|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2560mΩ @ VGS=10V |
| Drain current (ID) | 4A |
| Power dissipation (Ptot) | 40W |
| Input capacitance (Ciss) | 670pF |
| Output capacitance (Coss) | 70pF |
| Reverse transfer capacitance (Crss) | 18pF |
| Turn-on time (ton) | 20ns |
| Turn-off time (toff) | 100ns |
| Operating temperature range (Tj) | -55°C ~ 175°C |
| Package type | TO220F |
Domain and module applications：
Application fields and module examples
1. **Power management**: 3N65L-TF1-T-VB is suitable for various power management applications, especially those that require high voltage and low power, such as power adapters, LED lighting drivers, and solar inverters.
2. **Industrial control**: In industrial control systems, this MOSFET can be used in modules such as motor drivers, inverters, and industrial power supplies to provide efficient power conversion and stable power management.
3. **Electric vehicles**: In the motor drive system of electric vehicles, this MOSFET can be used in modules such as electric vehicle controllers, charging piles, and battery management systems to ensure efficient operation and safety of the system.
4. **Medical equipment**: In medical equipment, this MOSFET can be used in high-voltage power modules, medical imaging equipment, and medical monitoring equipment, etc., with high reliability and high-voltage resistance.
5. **Aerospace**: In the aerospace field, this MOSFET can be used in aircraft power systems, satellite communication equipment, and spacecraft electronic equipment, etc., with high voltage and high temperature resistance.
Through these specific examples of application areas and modules, it can be seen that 3N65L-TF1-T-VB TO220F MOSFET has been widely used in multiple high-voltage applications due to its excellent electrical performance and reliability.
1. **Power management**: 3N65L-TF1-T-VB is suitable for various power management applications, especially those that require high voltage and low power, such as power adapters, LED lighting drivers, and solar inverters.
2. **Industrial control**: In industrial control systems, this MOSFET can be used in modules such as motor drivers, inverters, and industrial power supplies to provide efficient power conversion and stable power management.
3. **Electric vehicles**: In the motor drive system of electric vehicles, this MOSFET can be used in modules such as electric vehicle controllers, charging piles, and battery management systems to ensure efficient operation and safety of the system.
4. **Medical equipment**: In medical equipment, this MOSFET can be used in high-voltage power modules, medical imaging equipment, and medical monitoring equipment, etc., with high reliability and high-voltage resistance.
5. **Aerospace**: In the aerospace field, this MOSFET can be used in aircraft power systems, satellite communication equipment, and spacecraft electronic equipment, etc., with high voltage and high temperature resistance.
Through these specific examples of application areas and modules, it can be seen that 3N65L-TF1-T-VB TO220F MOSFET has been widely used in multiple high-voltage applications due to its excellent electrical performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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