中文
English
3N65KG-TF3-T-VB Product details
Back to previous pageProduct introduction：
1. 3N65KG-TF3-T-VB Product Introduction
3N65KG-TF3-T-VB is a single N-channel MOSFET in TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 4A. 3N65KG-TF3-T-VB adopts planar technology to provide reliable performance and stability.
3N65KG-TF3-T-VB is a single N-channel MOSFET in TO220F package. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 4A. 3N65KG-TF3-T-VB adopts planar technology to provide reliable performance and stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. 3N65KG-TF3-T-VB Detailed parameter description
| Parameter| Value|
|--------------------|------------------------|
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2560mΩ @ VGS=10V |
| Drain current (ID) | 4A |
| Technology| Planar technology (Plannar) |
| Parameter| Value|
|--------------------|------------------------|
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2560mΩ @ VGS=10V |
| Drain current (ID) | 4A |
| Technology| Planar technology (Plannar) |
Domain and module applications：
3. 3N65KG-TF3-T-VB Application Fields and Module Examples
1. **Power Converter**:
Due to its high drain-source voltage and low drain-source resistance, 3N65KG-TF3-T-VB is ideal for the design of power converters. This MOSFET can provide high efficiency and reliability in DC-DC converters and AC-DC converters.
2. **UPS System**:
In an uninterruptible power supply (UPS) system, reliable switching devices are required to achieve the conversion from battery to AC power. The high drain-source voltage and stable performance of 3N65KG-TF3-T-VB make it an ideal choice for UPS systems.
3. **Electric Vehicle Charging Pile**:
Electric vehicle charging piles require high-performance switching devices to achieve the conversion and management of electrical energy. 3N65KG-TF3-T-VB can help improve the efficiency and charging speed of charging piles while maintaining system stability.
4. **Solar Inverter**:
In solar cell systems, the inverter plays a key role in converting DC power into AC power. 3N65KG-TF3-T-VB is suitable for the design of solar inverters, which helps to improve the energy conversion efficiency of solar energy systems.
In summary, 3N65KG-TF3-T-VB MOSFET has a wide range of application prospects in many fields, especially for applications that require high-performance switching devices. Its stability and reliability make it an ideal choice for various high-performance electronic devices.
1. **Power Converter**:
Due to its high drain-source voltage and low drain-source resistance, 3N65KG-TF3-T-VB is ideal for the design of power converters. This MOSFET can provide high efficiency and reliability in DC-DC converters and AC-DC converters.
2. **UPS System**:
In an uninterruptible power supply (UPS) system, reliable switching devices are required to achieve the conversion from battery to AC power. The high drain-source voltage and stable performance of 3N65KG-TF3-T-VB make it an ideal choice for UPS systems.
3. **Electric Vehicle Charging Pile**:
Electric vehicle charging piles require high-performance switching devices to achieve the conversion and management of electrical energy. 3N65KG-TF3-T-VB can help improve the efficiency and charging speed of charging piles while maintaining system stability.
4. **Solar Inverter**:
In solar cell systems, the inverter plays a key role in converting DC power into AC power. 3N65KG-TF3-T-VB is suitable for the design of solar inverters, which helps to improve the energy conversion efficiency of solar energy systems.
In summary, 3N65KG-TF3-T-VB MOSFET has a wide range of application prospects in many fields, especially for applications that require high-performance switching devices. Its stability and reliability make it an ideal choice for various high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
