中文
English
3N10L26-VB Product details
Back to previous pageProduct introduction：
1. 3N10L26-VB Product Introduction
3N10L26-VB is a single N-channel MOSFET in TO263 package. The product has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.8V, and a drain current (ID) of 70A. 3N10L26-VB uses advanced trench technology to provide excellent performance and reliability.
3N10L26-VB is a single N-channel MOSFET in TO263 package. The product has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 1.8V, and a drain current (ID) of 70A. 3N10L26-VB uses advanced trench technology to provide excellent performance and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. 3N10L26-VB Detailed parameter description
| Parameter| Value|
|--------------------|------------------------|
| Package| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 20mΩ @ VGS=10V |
| Drain current (ID) | 70A |
| Technology| Trench technology (Trench) |
| Parameter| Value|
|--------------------|------------------------|
| Package| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.8V |
| On-resistance (RDS(ON)) | 20mΩ @ VGS=10V |
| Drain current (ID) | 70A |
| Technology| Trench technology (Trench) |
Domain and module applications：
3. 3N10L26-VB Application Fields and Module Examples
1. **Electric Vehicles**:
3N10L26-VB is suitable for power management and drive systems in electric vehicles. Its high drain-source voltage and drain current capabilities make it a key component in electric vehicles for efficient electric vehicle performance and energy saving.
2. **Power Supply Module**:
In applications that require efficient power supply, such as industrial power supplies, server power supplies, and communication equipment, 3N10L26-VB can be used to improve conversion efficiency and reduce heat loss. Its low on-resistance and high current carrying capacity help achieve stable power output.
3. **Industrial Control Systems**:
Industrial control systems require reliable switching devices for precise control and response. The high performance characteristics of 3N10L26-VB make it an ideal choice in industrial control systems, including PLCs (Programmable Logic Controllers) and industrial automation equipment.
4. **LED lighting**:
In LED lighting applications, efficient power management devices are required to achieve dimming and control of lights. The high current carrying capacity and low on-resistance of 3N10L26-VB help improve the efficiency and stability of LED lighting systems.
Through the above application examples, it can be seen that 3N10L26-VB MOSFET has a wide range of application prospects in many fields. Its high performance characteristics and advanced trench technology make it an ideal choice for various high-performance electronic devices.
1. **Electric Vehicles**:
3N10L26-VB is suitable for power management and drive systems in electric vehicles. Its high drain-source voltage and drain current capabilities make it a key component in electric vehicles for efficient electric vehicle performance and energy saving.
2. **Power Supply Module**:
In applications that require efficient power supply, such as industrial power supplies, server power supplies, and communication equipment, 3N10L26-VB can be used to improve conversion efficiency and reduce heat loss. Its low on-resistance and high current carrying capacity help achieve stable power output.
3. **Industrial Control Systems**:
Industrial control systems require reliable switching devices for precise control and response. The high performance characteristics of 3N10L26-VB make it an ideal choice in industrial control systems, including PLCs (Programmable Logic Controllers) and industrial automation equipment.
4. **LED lighting**:
In LED lighting applications, efficient power management devices are required to achieve dimming and control of lights. The high current carrying capacity and low on-resistance of 3N10L26-VB help improve the efficiency and stability of LED lighting systems.
Through the above application examples, it can be seen that 3N10L26-VB MOSFET has a wide range of application prospects in many fields. Its high performance characteristics and advanced trench technology make it an ideal choice for various high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
