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3N06L06-VB TO252 Product details
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3N06L06-VB TO252 MOSFET Product Introduction
The 3N06L06-VB is a high-performance single N-channel field effect transistor designed for efficient energy management in a variety of electronic applications. Packaged in a TO-252 package, this MOSFET has excellent thermal performance and reliability, making it ideal for harsh environments. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 2.5V, ensuring ease of use in low-voltage circuits. The 3N06L06-VB uses advanced channel technology to provide low on-resistance, enhance energy efficiency and reduce heat generation.
The 3N06L06-VB is a high-performance single N-channel field effect transistor designed for efficient energy management in a variety of electronic applications. Packaged in a TO-252 package, this MOSFET has excellent thermal performance and reliability, making it ideal for harsh environments. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, it provides robust performance under different operating conditions. The device has a low gate threshold voltage (Vth) of 2.5V, ensuring ease of use in low-voltage circuits. The 3N06L06-VB uses advanced channel technology to provide low on-resistance, enhance energy efficiency and reduce heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 13(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 2.5V
- **RDS(ON) (on-resistance)**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **ID (continuous drain current)**: 58A
- **Technology**: Channel
- **Package**: TO-252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 2.5V
- **RDS(ON) (on-resistance)**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **ID (continuous drain current)**: 58A
- **Technology**: Channel
Domain and module applications：
Application Examples
1. **Power Module**: The 3N06L06-VB MOSFET is ideal for DC-DC converters and switching power supplies. Its low on-resistance and high current capacity enable high-efficiency conversion with minimal energy loss and heat dissipation.
2. **Motor Control Circuit**: In motor drive applications, this MOSFET can handle the high currents required to drive the motor. Its robust performance and thermal management capabilities make it an ideal choice for industrial and automotive motor control systems.
3. **Battery Management System**: The MOSFET's low gate threshold voltage and high current handling capabilities make it an excellent choice for battery protection and management circuits. In portable electronic devices and electric vehicles, ensuring battery efficiency and safety is critical.
4. **Load Switch**: The 3N06L06-VB can be used as a load switch in a variety of electronic devices. Its low on-resistance ensures that voltage drop and power loss are minimized when switching high current loads, making it suitable for consumer electronics and communication equipment.
5. **Renewable Energy Systems**: In solar inverters and other renewable energy systems, this MOSFET can handle the high currents generated by solar panels or wind turbines. Its trench technology improves energy efficiency, making it a reliable component in sustainable energy applications.
By using the 3N06L06-VB MOSFET in these applications, designers can achieve improved performance, energy efficiency and reliability, ensuring optimal operation of their electronic systems.
1. **Power Module**: The 3N06L06-VB MOSFET is ideal for DC-DC converters and switching power supplies. Its low on-resistance and high current capacity enable high-efficiency conversion with minimal energy loss and heat dissipation.
2. **Motor Control Circuit**: In motor drive applications, this MOSFET can handle the high currents required to drive the motor. Its robust performance and thermal management capabilities make it an ideal choice for industrial and automotive motor control systems.
3. **Battery Management System**: The MOSFET's low gate threshold voltage and high current handling capabilities make it an excellent choice for battery protection and management circuits. In portable electronic devices and electric vehicles, ensuring battery efficiency and safety is critical.
4. **Load Switch**: The 3N06L06-VB can be used as a load switch in a variety of electronic devices. Its low on-resistance ensures that voltage drop and power loss are minimized when switching high current loads, making it suitable for consumer electronics and communication equipment.
5. **Renewable Energy Systems**: In solar inverters and other renewable energy systems, this MOSFET can handle the high currents generated by solar panels or wind turbines. Its trench technology improves energy efficiency, making it a reliable component in sustainable energy applications.
By using the 3N06L06-VB MOSFET in these applications, designers can achieve improved performance, energy efficiency and reliability, ensuring optimal operation of their electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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