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3N0409-VB Product details
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Product Introduction Details
**3N0409-VB** is a single N-channel MOSFET produced by VBsemi in a TO252 package. The device has medium VDS and VGS values and is suitable for a variety of medium power applications. With its Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require medium power and low voltage drop.
**3N0409-VB** is a single N-channel MOSFET produced by VBsemi in a TO252 package. The device has medium VDS and VGS values and is suitable for a variety of medium power applications. With its Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require medium power and low voltage drop.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO252 | - | Medium power package|
| Configuration| Single N-channel| - | - |
| Drain-source voltage (VDS) | 40 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | 2.5 | V | Typical value|
| On-resistance (RDS(ON)) @ VGS=10V | 5 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 6 | mΩ | Maximum value|
| Drain current (ID) | 85 | A | Maximum value|
| Technology| Trench | - | - |
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO252 | - | Medium power package|
| Configuration| Single N-channel| - | - |
| Drain-source voltage (VDS) | 40 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | 2.5 | V | Typical value|
| On-resistance (RDS(ON)) @ VGS=10V | 5 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 6 | mΩ | Maximum value|
| Drain current (ID) | 85 | A | Maximum value|
| Technology| Trench | - | - |
Domain and module applications：
Application fields and modules
**3N0409-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power system**
- **DC-DC converter**: Due to its low on-resistance and high drain-source current capability, 3N0409-VB is suitable for use as the main switching device in DC-DC converters, and can work stably at medium power and high efficiency.
- **Battery management**: In battery management systems, this MOSFET can be used in battery protection and charge and discharge control, providing reliable power management functions.
2. **Power tools**
- **Electric vehicles**: In electric vehicles, 3N0409-VB can be used as a key component in drive motors and battery management systems, providing efficient energy conversion and drive control.
- **Industrial power tools**: In industrial power tools, this device can be used in power control and drive motors to improve the efficiency and service life of the tools.
3. **Power Management**
- **Smart Home**: In smart home systems, 3N0409-VB can be used in power management and circuit control to improve the intelligence and energy efficiency of the system.
- **Industrial Automation**: In industrial automation systems, the device can be used to control circuits and actuators to improve the response speed and efficiency of the system.
In general, 3N0409-VB is suitable for various electronic products and systems that require medium power and high reliability due to its medium power and Trench technology characteristics.
**3N0409-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power system**
- **DC-DC converter**: Due to its low on-resistance and high drain-source current capability, 3N0409-VB is suitable for use as the main switching device in DC-DC converters, and can work stably at medium power and high efficiency.
- **Battery management**: In battery management systems, this MOSFET can be used in battery protection and charge and discharge control, providing reliable power management functions.
2. **Power tools**
- **Electric vehicles**: In electric vehicles, 3N0409-VB can be used as a key component in drive motors and battery management systems, providing efficient energy conversion and drive control.
- **Industrial power tools**: In industrial power tools, this device can be used in power control and drive motors to improve the efficiency and service life of the tools.
3. **Power Management**
- **Smart Home**: In smart home systems, 3N0409-VB can be used in power management and circuit control to improve the intelligence and energy efficiency of the system.
- **Industrial Automation**: In industrial automation systems, the device can be used to control circuits and actuators to improve the response speed and efficiency of the system.
In general, 3N0409-VB is suitable for various electronic products and systems that require medium power and high reliability due to its medium power and Trench technology characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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