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3N0406-VB TO262 Product details
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Product Introduction
3N0406-VB is a single N-channel power MOSFET produced by VBsemi in a TO-262 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 75A. Using trench technology, the 3N0406-VB has low on-resistance and high current carrying capacity, suitable for medium and high power applications.
3N0406-VB is a single N-channel power MOSFET produced by VBsemi in a TO-262 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a continuous drain current (ID) of 75A. Using trench technology, the 3N0406-VB has low on-resistance and high current carrying capacity, suitable for medium and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: 3N0406-VB
- **Package type**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: 3N0406-VB
- **Package type**: TO-262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
3N0406-VB MOSFET is suitable for a variety of medium and high power applications, including but not limited to:
1. **Power converter**:
- In medium and high power power converters, such as switching power supplies, inverters, etc., the low on-resistance and high current carrying capacity of 3N0406-VB can improve system efficiency.
2. **Power tools**:
- In medium and high power power tools, such as electric drills and hammers, 3N0406-VB can provide reliable power switch control.
3. **Battery management**:
- In systems that require medium and high power battery management, such as electric vehicles, energy storage systems, etc., 3N0406-VB can provide efficient power control.
4. **Industrial control**:
- In industrial control systems that require medium and high power control, 3N0406-VB can provide stable and reliable power switch control.
5. **Electric Vehicle Charging Station**:
- In electric vehicle charging stations, 3N0406-VB can be used as a power switch to provide efficient charging control.
In general, 3N0406-VB is an excellent medium-to-high power MOSFET, suitable for a variety of applications requiring medium-to-high power handling capabilities, and can improve system efficiency and reliability.
3N0406-VB MOSFET is suitable for a variety of medium and high power applications, including but not limited to:
1. **Power converter**:
- In medium and high power power converters, such as switching power supplies, inverters, etc., the low on-resistance and high current carrying capacity of 3N0406-VB can improve system efficiency.
2. **Power tools**:
- In medium and high power power tools, such as electric drills and hammers, 3N0406-VB can provide reliable power switch control.
3. **Battery management**:
- In systems that require medium and high power battery management, such as electric vehicles, energy storage systems, etc., 3N0406-VB can provide efficient power control.
4. **Industrial control**:
- In industrial control systems that require medium and high power control, 3N0406-VB can provide stable and reliable power switch control.
5. **Electric Vehicle Charging Station**:
- In electric vehicle charging stations, 3N0406-VB can be used as a power switch to provide efficient charging control.
In general, 3N0406-VB is an excellent medium-to-high power MOSFET, suitable for a variety of applications requiring medium-to-high power handling capabilities, and can improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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