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3N0403-VB TO262 Product details
Back to previous pageProduct introduction：
1. Product Introduction
3N0403-VB is a single N-channel MOSFET in TO262 package. It has a drain-source voltage (VDS) of 60V and is suitable for medium power applications. The device adopts trench technology, which has low on-resistance and high drain current carrying capacity.
3N0403-VB is a single N-channel MOSFET in TO262 package. It has a drain-source voltage (VDS) of 60V and is suitable for medium power applications. The device adopts trench technology, which has low on-resistance and high drain current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | 5.7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 5.7mΩ @ VGS = 10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
1. **Motor drive**:
Due to its high drain-source voltage and high drain current carrying capacity, 3N0403-VB can be used as a switch in motor drivers to achieve motor starting, braking and speed regulation.
2. **Power management**:
In power management systems that require high efficiency and low on-resistance, this MOSFET can be used in switching power converters and power factor correction circuits (PFC).
3. **Automotive electronics**:
In automotive electronic systems, this device can be used in applications such as on-board power management, electric vehicle charging piles and electric vehicle motor controllers.
4. **Industrial control**:
3N0403-VB can also be used in power switches and electric actuators in industrial control systems to achieve high efficiency and reliability.
In summary, the 3N0403-VB is a single N-channel MOSFET suitable for medium power applications, especially suitable for motor drive, power management and automotive electronics.
1. **Motor drive**:
Due to its high drain-source voltage and high drain current carrying capacity, 3N0403-VB can be used as a switch in motor drivers to achieve motor starting, braking and speed regulation.
2. **Power management**:
In power management systems that require high efficiency and low on-resistance, this MOSFET can be used in switching power converters and power factor correction circuits (PFC).
3. **Automotive electronics**:
In automotive electronic systems, this device can be used in applications such as on-board power management, electric vehicle charging piles and electric vehicle motor controllers.
4. **Industrial control**:
3N0403-VB can also be used in power switches and electric actuators in industrial control systems to achieve high efficiency and reliability.
In summary, the 3N0403-VB is a single N-channel MOSFET suitable for medium power applications, especially suitable for motor drive, power management and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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