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35HM8810A-VB Product details
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Product Introduction Details
**35HM8810A-VB** is a dual N+N channel MOSFET produced by VBsemi, using SOT23-6 package. The device has a dual channel design and is suitable for a variety of low power applications. With its advanced Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require low power and low voltage drop.
**35HM8810A-VB** is a dual N+N channel MOSFET produced by VBsemi, using SOT23-6 package. The device has a dual channel design and is suitable for a variety of low power applications. With its advanced Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require low power and low voltage drop.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| SOT23-6 | - | Small package|
| Configuration| Dual N+N channel| - | - |
| Drain-source voltage (VDS) | 20 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | 0.5~1.5 | V | Typical value range|
| On-resistance (RDS(ON)) @ VGS=2.5V | 28 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 24 | mΩ | Maximum value|
| Drain current (ID) | 6 | A | Maximum value|
| Technology | Trench | - | - |
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| SOT23-6 | - | Small package|
| Configuration| Dual N+N channel| - | - |
| Drain-source voltage (VDS) | 20 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | 0.5~1.5 | V | Typical value range|
| On-resistance (RDS(ON)) @ VGS=2.5V | 28 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 24 | mΩ | Maximum value|
| Drain current (ID) | 6 | A | Maximum value|
| Technology | Trench | - | - |
Domain and module applications：
Applications and modules
**35HM8810A-VB** MOSFET has a wide range of applications, especially in the following areas and modules:
1. **Portable devices**
- **Smartphones**: Due to its small package and low power characteristics, the 35HM8810A-VB can be used as a power management and switching device in smartphones, providing high efficiency and long battery life.
- **Tablets**: In tablets, the device can be used for control circuits and sensor interfaces, providing stable power supply and signal processing.
2. **Consumer electronics**
- **Portable audio devices**: In portable audio devices, the 35HM8810A-VB can be used for audio amplifiers and battery management circuits, providing high-quality audio and long playback.
- **Portable game consoles**: In portable game consoles, the device can be used for control circuits and display interfaces, providing an efficient gaming experience.
3. **Industrial Control**
- **Sensor Interface**: In industrial sensor interface circuits, the 35HM8810A-VB can be used as a switch and amplifier for sensor signals, providing stable signal processing and data acquisition.
- **Industrial Automation**: In industrial automation systems, this MOSFET can be used to control motors and actuators, improving the response speed and efficiency of the system.
In general, the 35HM8810A-VB is suitable for a variety of portable and industrial electronic products that require low power and high reliability due to its low-to-medium power and dual-channel design.
**35HM8810A-VB** MOSFET has a wide range of applications, especially in the following areas and modules:
1. **Portable devices**
- **Smartphones**: Due to its small package and low power characteristics, the 35HM8810A-VB can be used as a power management and switching device in smartphones, providing high efficiency and long battery life.
- **Tablets**: In tablets, the device can be used for control circuits and sensor interfaces, providing stable power supply and signal processing.
2. **Consumer electronics**
- **Portable audio devices**: In portable audio devices, the 35HM8810A-VB can be used for audio amplifiers and battery management circuits, providing high-quality audio and long playback.
- **Portable game consoles**: In portable game consoles, the device can be used for control circuits and display interfaces, providing an efficient gaming experience.
3. **Industrial Control**
- **Sensor Interface**: In industrial sensor interface circuits, the 35HM8810A-VB can be used as a switch and amplifier for sensor signals, providing stable signal processing and data acquisition.
- **Industrial Automation**: In industrial automation systems, this MOSFET can be used to control motors and actuators, improving the response speed and efficiency of the system.
In general, the 35HM8810A-VB is suitable for a variety of portable and industrial electronic products that require low power and high reliability due to its low-to-medium power and dual-channel design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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