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34NM60NDTK31A60-VB Product details
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Product Introduction
The 34NM60NDTK31A60-VB is a single N-channel power MOSFET produced by VBsemi in a TO-247 package. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 47A. Using SJ_Multi-EPI technology, the 34NM60NDTK31A60-VB has low on-resistance and high voltage capability, suitable for medium and high power applications.
The 34NM60NDTK31A60-VB is a single N-channel power MOSFET produced by VBsemi in a TO-247 package. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 47A. Using SJ_Multi-EPI technology, the 34NM60NDTK31A60-VB has low on-resistance and high voltage capability, suitable for medium and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: 34NM60NDTK31A60-VB
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Model**: 34NM60NDTK31A60-VB
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
34NM60NDTK31A60-VB MOSFET is suitable for a variety of medium and high power applications, including but not limited to:
1. **Power Converters**:
- In medium and high power power converters, such as switching power supplies, inverters, etc., the low on-resistance and high current carrying capacity of 34NM60NDTK31A60-VB can improve system efficiency.
2. **Electric Vehicles**:
- In medium and high power electric vehicles such as electric cars and electric motorcycles, 34NM60NDTK31A60-VB can provide efficient power switch control.
3. **Industrial Control**:
- In industrial control systems that require medium and high power control, 34NM60NDTK31A60-VB can provide stable and reliable power switch control.
4. **Solar Inverter**:
- In solar inverter, 34NM60NDTK31A60-VB can be used as a high power switch to provide stable and reliable power control.
5. **Power Module**:
- In power modules that require medium to high power handling, 34NM60NDTK31A60-VB can provide efficient power switch control.
In general, 34NM60NDTK31A60-VB is an excellent medium to high power MOSFET, suitable for a variety of applications that require medium to high power handling capabilities, and can improve system efficiency and reliability.
34NM60NDTK31A60-VB MOSFET is suitable for a variety of medium and high power applications, including but not limited to:
1. **Power Converters**:
- In medium and high power power converters, such as switching power supplies, inverters, etc., the low on-resistance and high current carrying capacity of 34NM60NDTK31A60-VB can improve system efficiency.
2. **Electric Vehicles**:
- In medium and high power electric vehicles such as electric cars and electric motorcycles, 34NM60NDTK31A60-VB can provide efficient power switch control.
3. **Industrial Control**:
- In industrial control systems that require medium and high power control, 34NM60NDTK31A60-VB can provide stable and reliable power switch control.
4. **Solar Inverter**:
- In solar inverter, 34NM60NDTK31A60-VB can be used as a high power switch to provide stable and reliable power control.
5. **Power Module**:
- In power modules that require medium to high power handling, 34NM60NDTK31A60-VB can provide efficient power switch control.
In general, 34NM60NDTK31A60-VB is an excellent medium to high power MOSFET, suitable for a variety of applications that require medium to high power handling capabilities, and can improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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