中文
English
3310J-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
3310J-VB is a single P-channel MOSFET in TO251 package. It is designed for switching and amplification circuits that require negative drain-source voltage and medium current, with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 72mΩ and 56mΩ at a gate drive voltage of 4.5V and 10V respectively, allowing it to maintain low conduction losses in high-power applications.
3310J-VB is a single P-channel MOSFET in TO251 package. It is designed for switching and amplification circuits that require negative drain-source voltage and medium current, with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 72mΩ and 56mΩ at a gate drive voltage of 4.5V and 10V respectively, allowing it to maintain low conduction losses in high-power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | 72(mΩ) | 56(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 72mΩ @ VGS = 4.5V; 56mΩ @ VGS = 10V
- **Drain current (ID)**: -20A
- **Technology**: Trench
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 72mΩ @ VGS = 4.5V; 56mΩ @ VGS = 10V
- **Drain current (ID)**: -20A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
1. **Power management**:
3310J-VB can be used for power reverse protection, load switching and other negative drain-source voltage applications. Its high conduction capability and low on-resistance help improve the efficiency and stability of the power system.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for load switching, lighting control and other negative drain-source voltage applications. Its high withstand voltage and high on-current capability make it suitable for various working conditions in automotive electronic systems.
3. **Industrial control**:
3310J-VB is suitable for load switching and reverse protection circuits in industrial control systems. Its high performance and reliability make it an ideal choice for industrial control systems.
4. **Communication equipment**:
In communication equipment, this MOSFET can be used for power management and signal amplification. Its high performance and small package make it suitable for space-constrained applications in various communication equipment.
In summary, the 3310J-VB is a high-performance P-channel MOSFET suitable for a variety of high-power electronic applications that require negative drain-source voltage and medium current, especially in power management, automotive electronics, and industrial control.
1. **Power management**:
3310J-VB can be used for power reverse protection, load switching and other negative drain-source voltage applications. Its high conduction capability and low on-resistance help improve the efficiency and stability of the power system.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET can be used for load switching, lighting control and other negative drain-source voltage applications. Its high withstand voltage and high on-current capability make it suitable for various working conditions in automotive electronic systems.
3. **Industrial control**:
3310J-VB is suitable for load switching and reverse protection circuits in industrial control systems. Its high performance and reliability make it an ideal choice for industrial control systems.
4. **Communication equipment**:
In communication equipment, this MOSFET can be used for power management and signal amplification. Its high performance and small package make it suitable for space-constrained applications in various communication equipment.
In summary, the 3310J-VB is a high-performance P-channel MOSFET suitable for a variety of high-power electronic applications that require negative drain-source voltage and medium current, especially in power management, automotive electronics, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
