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3310GJ-VB Product details
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3310GJ-VB MOSFET Product Introduction
**Model:** 3310GJ-VB
**Package:** TO251
**Configuration:** Single P-channel
**Technology:** Trench
3310GJ-VB is a single P-channel MOSFET suitable for medium power load switching and power management applications. It has negative drain-source voltage and low on-resistance characteristics, suitable for use in various power electronic systems. The TO251 package provides good heat dissipation and mechanical strength, suitable for a variety of industrial and consumer electronic devices.
**Model:** 3310GJ-VB
**Package:** TO251
**Configuration:** Single P-channel
**Technology:** Trench
3310GJ-VB is a single P-channel MOSFET suitable for medium power load switching and power management applications. It has negative drain-source voltage and low on-resistance characteristics, suitable for use in various power electronic systems. The TO251 package provides good heat dissipation and mechanical strength, suitable for a variety of industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | 72(mΩ) | 56(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
3310GJ-VB MOSFET Detailed parameters
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -1.7V
- **RDS(ON) (on-resistance):**
- 72mΩ @ VGS = 4.5V
- 56mΩ @ VGS = 10V
- **ID (drain current):** -20A
- **Package type:** TO251
- **Technology:** Trench
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -1.7V
- **RDS(ON) (on-resistance):**
- 72mΩ @ VGS = 4.5V
- 56mΩ @ VGS = 10V
- **ID (drain current):** -20A
- **Package type:** TO251
- **Technology:** Trench
Domain and module applications：
3310GJ-VB Applications and Module Examples
Applications
1. **Power Management Systems:**
3310GJ-VB can be used in a variety of medium-power power management systems, such as switching power supplies, DC-DC converters, and regulators. Its negative drain-source voltage and low on-resistance make it an ideal choice for these systems.
2. **Industrial Control Systems:**
In industrial control systems, 3310GJ-VB can be used for medium-power load switches and motor controllers to ensure stable and reliable operation of the system.
3. **Battery-Powered Systems:**
In battery-powered systems, 3310GJ-VB can be used as a battery management and battery protection device to ensure the safety and stability of the battery charging and discharging process.
Module Examples
1. **Portable Device Power Management Module:**
3310GJ-VB can be used in power management modules in various portable devices to ensure high efficiency and stable performance of the devices.
2. **Industrial Automation Control Module:**
In industrial automation control systems, 3310GJ-VB can be used in various medium-power control modules, such as motor control, lighting control, etc.
3. **Battery Charge and Discharge Control Module:**
In applications that require precise charge and discharge control of batteries, 3310GJ-VB can be used as a control device to ensure safe and stable operation of the battery.
In summary, as a medium-power single P-channel MOSFET, 3310GJ-VB can play an important role in various power electronic systems and medium-power load switch applications, especially for applications that require medium power handling capabilities and low on-resistance.
Applications
1. **Power Management Systems:**
3310GJ-VB can be used in a variety of medium-power power management systems, such as switching power supplies, DC-DC converters, and regulators. Its negative drain-source voltage and low on-resistance make it an ideal choice for these systems.
2. **Industrial Control Systems:**
In industrial control systems, 3310GJ-VB can be used for medium-power load switches and motor controllers to ensure stable and reliable operation of the system.
3. **Battery-Powered Systems:**
In battery-powered systems, 3310GJ-VB can be used as a battery management and battery protection device to ensure the safety and stability of the battery charging and discharging process.
Module Examples
1. **Portable Device Power Management Module:**
3310GJ-VB can be used in power management modules in various portable devices to ensure high efficiency and stable performance of the devices.
2. **Industrial Automation Control Module:**
In industrial automation control systems, 3310GJ-VB can be used in various medium-power control modules, such as motor control, lighting control, etc.
3. **Battery Charge and Discharge Control Module:**
In applications that require precise charge and discharge control of batteries, 3310GJ-VB can be used as a control device to ensure safe and stable operation of the battery.
In summary, as a medium-power single P-channel MOSFET, 3310GJ-VB can play an important role in various power electronic systems and medium-power load switch applications, especially for applications that require medium power handling capabilities and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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