Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
500V |
|
3.5V |
30A |
|
|
140(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
500V |
|
3.5V |
30A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
500V |
|
3.5V |
30A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: 32NM50N-VB
- **Package type**: TO-220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 30A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
32NM50N-VB MOSFET is suitable for a variety of medium power applications, including but not limited to:
1. **Power converter**:
- In medium power power converters, such as switching power supplies, inverters, etc., the low on-resistance and high voltage capability of 32NM50N-VB can improve system efficiency.
2. **Power tools**:
- In medium power power tools, such as electric drills and hammers, 32NM50N-VB can provide reliable power switch control.
3. **LED lighting**:
- In LED lighting systems, 32NM50N-VB can be used as a power switch for LED drivers, providing stable and reliable power control.
4. **Industrial control**:
- In industrial control systems that require medium power control, 32NM50N-VB can provide stable and reliable power switch control.
5. **Automotive Electronics**:
- In automotive electronic systems, such as automotive lighting, motor control, etc., 32NM50N-VB can provide efficient power control.
In general, 32NM50N-VB is an excellent mid-power MOSFET, suitable for a variety of applications that require mid-power handling capabilities, and can improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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