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31GTT8205S-A-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
31GTT8205S-A-VB is a dual N+N channel MOSFET in SOT23-6 package. It is designed for switching and amplification circuits that require high current and low voltage, with a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 28mΩ and 24mΩ at a gate drive voltage of 2.5V and 4.5V respectively, allowing it to maintain low conduction losses in high-power applications.
31GTT8205S-A-VB is a dual N+N channel MOSFET in SOT23-6 package. It is designed for switching and amplification circuits that require high current and low voltage, with a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V. Through advanced trench technology, this MOSFET has a low on-resistance (RDS(ON)), which is 28mΩ and 24mΩ at a gate drive voltage of 2.5V and 4.5V respectively, allowing it to maintain low conduction losses in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28(mΩ) | 24(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. Detailed parameter description
- **Package type**: SOT23-6
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 28mΩ @ VGS = 2.5V; 24mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench
- **Package type**: SOT23-6
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 28mΩ @ VGS = 2.5V; 24mΩ @ VGS = 4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications：
III. Applications and Module Examples
1. **Mobile Phones and Mobile Devices**:
31GTT8205S-A-VB can be used for power management and signal amplification in mobile phones and other mobile devices. Its small package and low on-resistance make it an ideal choice for these devices.
2. **Battery Management**:
In battery management systems, this MOSFET can be used for charge and discharge control, battery protection, etc. Its high drain current and low on-resistance ensure efficient battery management.
3. **Power Switch**:
31GTT8205S-A-VB can be used for low-voltage power switches, DC-DC converters, etc. Its high current carrying capacity and low conduction loss help improve the efficiency and stability of power switches.
4. **LED Lighting**:
In LED lighting systems, this MOSFET can be used to control LED drive circuits. Its low on-resistance and high current carrying capacity help improve the efficiency and brightness of LED lighting systems.
In summary, 31GTT8205S-A-VB is a high-performance dual N+N channel MOSFET, suitable for various high-power electronic applications that require high current, low voltage and high efficiency, especially suitable for mobile phones, mobile devices, battery management and other fields.
1. **Mobile Phones and Mobile Devices**:
31GTT8205S-A-VB can be used for power management and signal amplification in mobile phones and other mobile devices. Its small package and low on-resistance make it an ideal choice for these devices.
2. **Battery Management**:
In battery management systems, this MOSFET can be used for charge and discharge control, battery protection, etc. Its high drain current and low on-resistance ensure efficient battery management.
3. **Power Switch**:
31GTT8205S-A-VB can be used for low-voltage power switches, DC-DC converters, etc. Its high current carrying capacity and low conduction loss help improve the efficiency and stability of power switches.
4. **LED Lighting**:
In LED lighting systems, this MOSFET can be used to control LED drive circuits. Its low on-resistance and high current carrying capacity help improve the efficiency and brightness of LED lighting systems.
In summary, 31GTT8205S-A-VB is a high-performance dual N+N channel MOSFET, suitable for various high-power electronic applications that require high current, low voltage and high efficiency, especially suitable for mobile phones, mobile devices, battery management and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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