中文
English
318F-VB Product details
Back to previous pageProduct introduction：
318F-VB MOSFET Product Introduction
**Model:** 318F-VB
**Package:** SOT23-6
**Configuration:** Dual-P+P-Channel
**Technology:** Trench
318F-VB is a dual-P+P-Channel MOSFET suitable for low-voltage load switching and power management applications. It has negative drain-source voltage and low on-resistance characteristics, suitable for use in various portable devices and battery-powered systems. The SOT23-6 package provides a small package size and good heat dissipation performance, suitable for compact electronic devices.
**Model:** 318F-VB
**Package:** SOT23-6
**Configuration:** Dual-P+P-Channel
**Technology:** Trench
318F-VB is a dual-P+P-Channel MOSFET suitable for low-voltage load switching and power management applications. It has negative drain-source voltage and low on-resistance characteristics, suitable for use in various portable devices and battery-powered systems. The SOT23-6 package provides a small package size and good heat dissipation performance, suitable for compact electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
318F-VB MOSFET Detailed parameters
- **VDS (drain-source voltage):** -20V
- **VGS (gate-source voltage):** ±12V
- **Vth (threshold voltage):** -0.6V
- **RDS(ON) (on-resistance):**
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **ID (drain current):** -4A
- **Package type:** SOT23-6
- **Technology:** Trench
- **VDS (drain-source voltage):** -20V
- **VGS (gate-source voltage):** ±12V
- **Vth (threshold voltage):** -0.6V
- **RDS(ON) (on-resistance):**
- 100mΩ @ VGS = 2.5V
- 75mΩ @ VGS = 4.5V
- **ID (drain current):** -4A
- **Package type:** SOT23-6
- **Technology:** Trench
Domain and module applications：
318F-VB Applications and Module Examples
Applications
1. **Portable Devices:**
318F-VB can be used in a variety of portable devices such as smartphones, tablets, and portable audio devices. Its small package size and low power characteristics make it an ideal choice for these devices.
2. **Battery-Powered Systems:**
In battery-powered systems, 318F-VB can be used as a battery management and battery protection device to ensure the safety and stability of the battery charging and discharging process.
3. **Low-Power Load Switches:**
318F-VB can be used in a variety of low-voltage load switches, such as LED lighting control, low-power motor control, etc. Its negative drain-source voltage and low on-resistance make it an ideal choice for these systems.
Module Examples
1. **Portable Charger Module:**
318F-VB can be used in portable charger modules to ensure high efficiency and stable performance of the charger.
2. **Battery Charge and Discharge Control Module:**
In applications where precise charge and discharge control of the battery is required, 318F-VB can be used as a control device to ensure safe and stable operation of the battery.
3. **LED Lighting Control Module:**
For applications where precise control of LED lighting brightness is required, 318F-VB can be used as a control device to ensure long-term stable operation of the LED.
In summary, as a low-voltage dual P-channel MOSFET, 318F-VB can play an important role in various portable devices and low-power load switching applications, especially for applications that require negative voltage handling capabilities and low on-resistance.
Applications
1. **Portable Devices:**
318F-VB can be used in a variety of portable devices such as smartphones, tablets, and portable audio devices. Its small package size and low power characteristics make it an ideal choice for these devices.
2. **Battery-Powered Systems:**
In battery-powered systems, 318F-VB can be used as a battery management and battery protection device to ensure the safety and stability of the battery charging and discharging process.
3. **Low-Power Load Switches:**
318F-VB can be used in a variety of low-voltage load switches, such as LED lighting control, low-power motor control, etc. Its negative drain-source voltage and low on-resistance make it an ideal choice for these systems.
Module Examples
1. **Portable Charger Module:**
318F-VB can be used in portable charger modules to ensure high efficiency and stable performance of the charger.
2. **Battery Charge and Discharge Control Module:**
In applications where precise charge and discharge control of the battery is required, 318F-VB can be used as a control device to ensure safe and stable operation of the battery.
3. **LED Lighting Control Module:**
For applications where precise control of LED lighting brightness is required, 318F-VB can be used as a control device to ensure long-term stable operation of the LED.
In summary, as a low-voltage dual P-channel MOSFET, 318F-VB can play an important role in various portable devices and low-power load switching applications, especially for applications that require negative voltage handling capabilities and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
