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30P10GI-VB Product details
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Product Introduction Details
**30P10GI-VB** is a single P-channel MOSFET produced by VBsemi in a TO220F package. The device has high VDS and VGS values and is suitable for a variety of medium and high power applications. With its advanced Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require high performance and low voltage drop.
**30P10GI-VB** is a single P-channel MOSFET produced by VBsemi in a TO220F package. The device has high VDS and VGS values and is suitable for a variety of medium and high power applications. With its advanced Trench technology, this MOSFET excels in on-resistance and current handling capability, and is particularly suitable for circuit designs that require high performance and low voltage drop.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | 37(mΩ) | 33(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
Detailed parameter description
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO220F | - | Medium and high power package|
| Configuration| Single P-channel| - | - |
| Drain-source voltage (VDS) | -100 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | -2 | V | Typical value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 37 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=10V | 33 | mΩ | Maximum value|
| Drain current (ID) | -50 | A | Maximum value|
| Technology| Trench | - | - |
| Parameter| Value| Unit| Remarks|
| ---- | ---- | ---- | ---- | ---- |
| Package type| TO220F | - | Medium and high power package|
| Configuration| Single P-channel| - | - |
| Drain-source voltage (VDS) | -100 | V | Maximum value|
| Gate-source voltage (VGS) | ±20 | V | Maximum value|
| Threshold voltage (Vth) | -2 | V | Typical value|
| On-resistance (RDS(ON)) @ VGS=4.5V | 37 | mΩ | Maximum value|
| On-resistance (RDS(ON)) @ VGS=10V | 33 | mΩ | Maximum value|
| Drain current (ID) | -50 | A | Maximum value|
| Technology| Trench | - | - |
Domain and module applications：
Application fields and modules
**30P10GI-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power supply system**
- **Switching power supply**: Due to its low on-resistance and high drain-source current capability, 30P10GI-VB is very suitable for use as the main switching device in the switching power supply, and can work stably at high current and high efficiency.
- **Power management module**: In the power management module, this MOSFET can be used in high-efficiency DC-DC converters and AC-DC converters to provide efficient energy conversion.
2. **Automotive electronics**
- **Automotive power management**: In the automotive power management system, 30P10GI-VB can be used as a switching element in battery management and motor controllers, providing high efficiency and stability.
- **Lighting system**: In the automotive lighting system, this device can be used in LED lighting drive circuits to provide high brightness and energy efficiency.
3. **Industrial Control**
- **Motor Control**: In industrial motor control systems, 30P10GI-VB can be used to control the start and stop and speed regulation of the motor, and is suitable for high-power and high-efficiency motor control.
- **Sensor Interface**: In industrial sensor interface circuits, this MOSFET can be used as a switch and amplifier for sensor signals, providing stable signal processing.
In general, 30P10GI-VB is suitable for a variety of electronic products and systems that require high power and high reliability due to its high current and low on-resistance.
**30P10GI-VB** MOSFET has a wide range of applications, especially suitable for the following fields and modules:
1. **Power supply system**
- **Switching power supply**: Due to its low on-resistance and high drain-source current capability, 30P10GI-VB is very suitable for use as the main switching device in the switching power supply, and can work stably at high current and high efficiency.
- **Power management module**: In the power management module, this MOSFET can be used in high-efficiency DC-DC converters and AC-DC converters to provide efficient energy conversion.
2. **Automotive electronics**
- **Automotive power management**: In the automotive power management system, 30P10GI-VB can be used as a switching element in battery management and motor controllers, providing high efficiency and stability.
- **Lighting system**: In the automotive lighting system, this device can be used in LED lighting drive circuits to provide high brightness and energy efficiency.
3. **Industrial Control**
- **Motor Control**: In industrial motor control systems, 30P10GI-VB can be used to control the start and stop and speed regulation of the motor, and is suitable for high-power and high-efficiency motor control.
- **Sensor Interface**: In industrial sensor interface circuits, this MOSFET can be used as a switch and amplifier for sensor signals, providing stable signal processing.
In general, 30P10GI-VB is suitable for a variety of electronic products and systems that require high power and high reliability due to its high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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