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30NM50N-VB TO263 Product details
Back to previous pageProduct introduction：
1. Product Introduction
**Product Model**: 30NM50N-VB
**Package Type**: TO263
**Product Overview**: 30NM50N-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has high voltage and high current handling capabilities. The device has low on-resistance and high reliability, and is suitable for a variety of high-voltage power control and conversion applications.
**Product Model**: 30NM50N-VB
**Package Type**: TO263
**Product Overview**: 30NM50N-VB is a single N-channel MOSFET that uses SJ_Multi-EPI technology and has high voltage and high current handling capabilities. The device has low on-resistance and high reliability, and is suitable for a variety of high-voltage power control and conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | 140(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples
**Fields:**
1. **Power management**: 30NM50N-VB is suitable for high voltage power management applications such as switching power supplies and inverters.
2. **Industrial control**: Due to its high voltage and current handling capabilities, the device is suitable for industrial control systems such as high frequency power supplies and electromagnetic field control.
3. **Renewable energy systems**: Suitable for power control modules in solar and wind energy conversion systems.
4. **Electric vehicles**: Used in battery management and motor drive systems in electric vehicles.
**Modules:**
1. **Switching power supply**: In high voltage switching power supplies, 30NM50N-VB can be used as a power switching element to achieve efficient power conversion and stable output.
2. **Inverter**: In the inverter, it provides high power output, suitable for solar and wind energy conversion systems, and improves the conversion efficiency of the system.
3. **Motor controller**: In motor controllers, its high current handling capability enables efficient motor drive, which is suitable for various industrial and automotive applications.
4. **Battery management system**: In electric vehicles and renewable energy systems, 30NM50N-VB can be used in battery management systems to achieve efficient charge and discharge control and power management.
In summary, 30NM50N-VB MOSFET can meet the needs of different high-voltage electronic systems with its high voltage, high current handling capability and low on-resistance, and improve the efficiency and reliability of the system.
**Fields:**
1. **Power management**: 30NM50N-VB is suitable for high voltage power management applications such as switching power supplies and inverters.
2. **Industrial control**: Due to its high voltage and current handling capabilities, the device is suitable for industrial control systems such as high frequency power supplies and electromagnetic field control.
3. **Renewable energy systems**: Suitable for power control modules in solar and wind energy conversion systems.
4. **Electric vehicles**: Used in battery management and motor drive systems in electric vehicles.
**Modules:**
1. **Switching power supply**: In high voltage switching power supplies, 30NM50N-VB can be used as a power switching element to achieve efficient power conversion and stable output.
2. **Inverter**: In the inverter, it provides high power output, suitable for solar and wind energy conversion systems, and improves the conversion efficiency of the system.
3. **Motor controller**: In motor controllers, its high current handling capability enables efficient motor drive, which is suitable for various industrial and automotive applications.
4. **Battery management system**: In electric vehicles and renewable energy systems, 30NM50N-VB can be used in battery management systems to achieve efficient charge and discharge control and power management.
In summary, 30NM50N-VB MOSFET can meet the needs of different high-voltage electronic systems with its high voltage, high current handling capability and low on-resistance, and improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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