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30NM50N-VB TO247 Product details
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Product Introduction
30NM50N-VB is a single N-channel power MOSFET produced by VBsemi in a TO-247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 40A. Using SJ_Multi-EPI technology, the 30NM50N-VB has low on-resistance and high voltage capability, suitable for high-voltage, high-power applications.
30NM50N-VB is a single N-channel power MOSFET produced by VBsemi in a TO-247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 40A. Using SJ_Multi-EPI technology, the 30NM50N-VB has low on-resistance and high voltage capability, suitable for high-voltage, high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: 30NM50N-VB
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: 30NM50N-VB
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and Module Examples
30NM50N-VB MOSFET is suitable for a variety of high voltage, high power applications, including but not limited to:
1. **Industrial Power**:
- In high voltage industrial power supplies, such as industrial power supply equipment and power systems, 30NM50N-VB can be used as a switching device to achieve high efficiency energy conversion.
2. **Electric Vehicle Charger**:
- In electric vehicle chargers, the high voltage and high current capabilities of 30NM50N-VB can provide stable and efficient charging functions.
3. **Solar Inverter**:
- In solar power generation systems, 30NM50N-VB can be used as an inverter to convert DC power to AC power and improve energy utilization.
4. **Medical Equipment**:
- In medical equipment that requires high voltage and high power handling capabilities, 30NM50N-VB can provide reliable power switch control.
5. **High Voltage Power Management**:
- In situations where a high voltage stable power supply is required, such as radar systems and high voltage equipment, the 30NM50N-VB can provide stable and reliable power control.
In general, the 30NM50N-VB is a power MOSFET suitable for high voltage and high power applications, with low on-resistance and high voltage capability, which can meet the needs of a variety of high power applications.
30NM50N-VB MOSFET is suitable for a variety of high voltage, high power applications, including but not limited to:
1. **Industrial Power**:
- In high voltage industrial power supplies, such as industrial power supply equipment and power systems, 30NM50N-VB can be used as a switching device to achieve high efficiency energy conversion.
2. **Electric Vehicle Charger**:
- In electric vehicle chargers, the high voltage and high current capabilities of 30NM50N-VB can provide stable and efficient charging functions.
3. **Solar Inverter**:
- In solar power generation systems, 30NM50N-VB can be used as an inverter to convert DC power to AC power and improve energy utilization.
4. **Medical Equipment**:
- In medical equipment that requires high voltage and high power handling capabilities, 30NM50N-VB can provide reliable power switch control.
5. **High Voltage Power Management**:
- In situations where a high voltage stable power supply is required, such as radar systems and high voltage equipment, the 30NM50N-VB can provide stable and reliable power control.
In general, the 30NM50N-VB is a power MOSFET suitable for high voltage and high power applications, with low on-resistance and high voltage capability, which can meet the needs of a variety of high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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