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30NM50N-VB TO220F Product details
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1. Product Introduction
**30NM50N-VB** is a single N-channel MOSFET produced by VBsemi, using TO220F package. The device has the characteristics of high drain voltage and low on-resistance, suitable for high voltage and high power application scenarios. 30NM50N-VB has broad application prospects in power switches, electric vehicle charging piles and industrial electronics.
**30NM50N-VB** is a single N-channel MOSFET produced by VBsemi, using TO220F package. The device has the characteristics of high drain voltage and low on-resistance, suitable for high voltage and high power application scenarios. 30NM50N-VB has broad application prospects in power switches, electric vehicle charging piles and industrial electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI (multi-epitaxial structure)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: SJ_Multi-EPI (multi-epitaxial structure)
Domain and module applications：
3. Application fields and module examples
**30NM50N-VB** is suitable for the following fields and modules:
1. **Power switch**:
- In high-voltage, high-power power switch modules, 30NM50N-VB can be used as the main switch tube to provide efficient power conversion and stable voltage output, suitable for industrial equipment and communication base stations.
2. **Electric vehicle charging pile**:
- In electric vehicle fast charging piles, this MOSFET can be used as a power switch and voltage stabilizer to ensure efficient and stable operation of the charging pile, suitable for urban and highway charging stations.
3. **Industrial electronics**:
- In industrial control and power transmission equipment, 30NM50N-VB can be used as a power switch and voltage regulator to support efficient and stable operation of industrial equipment, suitable for factory automation and power systems.
4. **Solar Inverter**:
- In the inverter of the solar power generation system, the device can be used as a power switch and voltage stabilizer to ensure the stable output of the solar panel, which is suitable for home and commercial solar power generation systems.
5. **Power Supply**:
- In the high-voltage, high-power power supply, 30NM50N-VB can be used as the main switch tube to support the stable power supply of the equipment, which is suitable for data centers and communication base stations.
With its high voltage, high power characteristics and reliability, 30NM50N-VB is suitable for various high-voltage, high-power power electronics applications and is an ideal choice for electronic engineers in design.
**30NM50N-VB** is suitable for the following fields and modules:
1. **Power switch**:
- In high-voltage, high-power power switch modules, 30NM50N-VB can be used as the main switch tube to provide efficient power conversion and stable voltage output, suitable for industrial equipment and communication base stations.
2. **Electric vehicle charging pile**:
- In electric vehicle fast charging piles, this MOSFET can be used as a power switch and voltage stabilizer to ensure efficient and stable operation of the charging pile, suitable for urban and highway charging stations.
3. **Industrial electronics**:
- In industrial control and power transmission equipment, 30NM50N-VB can be used as a power switch and voltage regulator to support efficient and stable operation of industrial equipment, suitable for factory automation and power systems.
4. **Solar Inverter**:
- In the inverter of the solar power generation system, the device can be used as a power switch and voltage stabilizer to ensure the stable output of the solar panel, which is suitable for home and commercial solar power generation systems.
5. **Power Supply**:
- In the high-voltage, high-power power supply, 30NM50N-VB can be used as the main switch tube to support the stable power supply of the equipment, which is suitable for data centers and communication base stations.
With its high voltage, high power characteristics and reliability, 30NM50N-VB is suitable for various high-voltage, high-power power electronics applications and is an ideal choice for electronic engineers in design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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